Efficient Transformerless MOSFET Inverter for a Grid-Tied Photovoltaic System

The unipolar sinusoidal pulse width modulation full-bridge transformerless photovoltaic (PV) inverter can achieve high efficiency by using latest superjunction metal-oxide-semiconductor field-effect transistor (MOSFET) together with silicon carbide (SiC) diodes. However, the MOSFETs aSiCre limited to use in transformerless PV inverter due to the low reverse-recovery characteristics of the body diode. In this paper, a family of new transformerless PV inverter topology for a single-phase grid-tied operation is proposed using superjunction MOSFETs and SiC diodes as no reverse-recovery issues are required for the main power switches for unity power operation. The added clamping branch clamps the freewheeling voltage at the half of dc input voltage during the freewheeling period. As a result, the common-mode voltage kept constant during the whole grid period that reduces the leakage current significantly. In addition, dead time is not necessary for main power switches at both the high-frequency commutation and the grid zero crossing instant, results low-current distortion at output. Finally, a 1-kW prototype is built and tested to verify the theoretical analysis. The experimental results show 98.5% maximum efficiency and 98.32% European efficiency. Furthermore, to show the effectiveness, the proposed topology is compared with the other transformerless topologies.