Integrated Frontends for Millimeterwave Applications Using III-V Technologies

Recent results from the Microwave Electronics Laboratory at MC2, Chalmers University, on mil-limeterwave front-end circuits based on III-V-technologies such as mixers, amplifiers, frequency multipliers, IF-amplifiers with gain-control, and VCOs are presented. Reflection type VCOs, cross coupled pair and balanced Colpitt VCO, have been designed in both HEMT and HBT tech-nologies and results are compared. Various balanced and single ended 7 – 28 GHz MMIC fre-quency multipliers are described and compared. Single ended, balanced and single sideband mixers are also reported. Examples of multi-stage mHEMT and pHEMT wideband amplifier for example covering 43-64 GHz with a gain of 24 dB, a minimum noise figure of 2.5 dB and ripple of 2 dB are shown. In order to reduce the manufacturing cost for future 60 GHz products, a high integration level is necessary. Recent results on mHEMT and pHEMT multifunctional re-ceiver/transmitters utilizing the described circuits are reported.

[1]  Herbert Zirath,et al.  MMIC-based nonlinear circuits for millimeter wave applications with low power dissipation , 2001, APMC 2001. 2001 Asia-Pacific Microwave Conference (Cat. No.01TH8577).

[2]  Peter H. Ladbrooke,et al.  MMIC Design GaAs FETs and HEMTs , 1989 .

[3]  J. Everard.  Low noise oscillators , 1992, 1992 IEEE Microwave Symposium Digest MTT-S.

[4]  Behzad Razavi,et al.  RF Microelectronics , 1997 .

[5]  S.E. Gunnarsson,et al.  Highly integrated 60 GHz transmitter and receiver MMICs in a GaAs pHEMT technology , 2005, IEEE Journal of Solid-State Circuits.