Minority carrier diffusion lengths in liquid phase epitaxial InGaAsP and InGaAs

[1]  G. Olsen,et al.  Vapor-phase growth of (In,Ga)(As,P) quaternary alloys , 1981 .

[2]  L. W. Cook,et al.  Effects of a finite melt on the thickness and composition of liquid phase epitaxial InGaAsP and InGaAs layers grown by the diffusion‐limited step‐cooling technique , 1980 .

[3]  A. Sasaki,et al.  Properties of Zn-Doped P-Type In0.53Ga0.47As on InP Substrate , 1980 .

[4]  L. W. Cook,et al.  Lattice constant, bandgap, thickness, and surface morphology of InGaAsP-InP layers grown by step-cooling, equilibrium-cooling, supercooling and two-phase-solution growth techniques , 1980 .

[5]  M. Umeno,et al.  Measurement of Diffusion Coefficient and Surface Recombination Velocity for p-InGaAsP Grown on InP , 1980 .

[6]  N. Holonyak,et al.  Bevel cross sectioning of ultra-thin (∼ 100 Å) III–V semiconductor layers , 1979 .

[7]  T. Pearsall,et al.  The thermal‐expansion parameters of some GaxIn1−xAsyP1−x alloys , 1979 .

[8]  J. J. Hsieh,et al.  GaInAsP/InP Avalanche Photodiodes* , 1978, Integrated and Guided Wave Optics.

[9]  K. Ashley,et al.  Diffusion lengths in amphoteric GaAs heteroface solar cells , 1978 .

[10]  Takeshi Kamiya,et al.  Effect of Photon Recycling on Diffusion Length and Internal Quantum Efficiency in AlxGa1-xAs–GaAs Heterostructures , 1977 .

[11]  M. C. Rowland,et al.  Effect of heterostructure on the hole diffusion length of epitaxial GaAs , 1973 .

[12]  B. Miller,et al.  Variation of minority-carrier diffusion length with carrier concentration in GaAs liquid-phase epitaxial layers , 1973 .

[13]  Henry Kressel,et al.  Minority carrier diffusion length and recombination lifetime in GaAs:Ge prepared by liquid‐phase epitaxy , 1973 .

[14]  A. Bergh,et al.  uv Microprobe Technique for Measurement of Minority‐Carrier Diffusion Length in GaP p‐n Junction Material , 1971 .