Gate Controlled Conductance Oscillations in GaAs Schottky Wrap-Gate Single Electron Transistors

Conductance oscillation characteristics of a Schottky wrap-gate controlled single electron transistor (WPG SET) were investigated. The device showed a small number of high conductance peaks and they were visible up to 30 K. These features were explained by a lateral single electron resonant tunneling. The line width of the resonant state was estimated to be 1.5 meV and indicated the strong coupling between dot and leads. In low temperatures where kT was much smaller than addition energy, the device showed an unusual temperature dependence of the peak width, whose behavior was different from that expected from the theory.