Junction Temperature Extraction Approach With Turn-Off Delay Time for High-Voltage High-Power IGBT Modules

Thermo-sensitive electrical parameter (TSEP) approaches are widely employed in the junction temperature extraction and prediction of power semiconductor devices. In this paper, the turn-off delay time is explored as an indicator of a TSEP to extract the junction temperature from high-power insulated gate bipolar transistor (IGBT) modules. The parasitic inductor LeE between the Kelvin and power emitter terminals of an IGBT module is utilized to extract the turn-off delay time. Furthermore, the monotonic dependence between the junction temperature and turn-off delay time is investigated. The beginning and end point of the turn-off delay time can be determined by monitoring the induced voltage veE across the inductor LeE. A dynamic switching characteristic test platform for high-power IGBT modules is used to experimentally verify the theoretical analysis. The experimental results show that the dependency between IGBT junction temperature and turn-off delay time is near linear. It is established that the turn-off delay time is a viable TSEP with good linearity, fixed sensitivity, and offers nondestruction on-line IGBT junction temperature extraction.

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