A Single-Piece C,-Continuous MOSFET Model Including Subthreshold Conduction

In this paper we introduce a simple yet powerful technique that transforms regional compact (algebraic) MOS- FET models into single-piece C,-continuous models. The tech- nique significantly improves MOSFET models by removing kinks and glitches at the boundaries between the subthreshold, triode, and saturation regions of operation. In addition, the technique adds subthreshold conduction modeling to models that lack such a capability. We show the technique by extending a simple MOSFET model, which is three piece and does not model subthreshold conduction, to become a single-piece model that includes subthreshold conduction.