Investigation of fast and slow decays in InGaN/GaN quantum wells

We have measured and analyzed the photoluminescence spectra from InGaN/GaN multiple quantum wells. Emission peaks due to recombination of the photogenerated carriers occupying localized states and extended states within quantum wells have been identified through temperature-dependent photoluminescence. Fast and slow decays have been attributed to recombination of carriers in extended states and localized states, respectively, based on time-resolved pump-probe differential photoluminescence.

[1]  Ronald A. Arif,et al.  Design and characteristics of staggered InGaN quantum-well light-emitting diodes in the green spectral regime , 2009 .

[2]  T. Mukai,et al.  Interplay of built-in potential and piezoelectric field on carrier recombination in green light emitting InGaN quantum wells , 2007 .

[3]  Colin J. Humphreys,et al.  Electron-beam-induced strain within InGaN quantum wells: False indium “cluster” detection in the transmission electron microscope , 2003 .

[4]  Pierre Lefebvre,et al.  High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy , 2001 .

[5]  S. Nakamura,et al.  Room‐temperature continuous‐wave operation of InGaN multi‐quantum‐well structure laser diodes , 1996 .

[6]  Hongping Zhao,et al.  Design Analysis of Staggered InGaN Quantum Wells Light-Emitting Diodes at 500–540 nm , 2009, IEEE Journal of Selected Topics in Quantum Electronics.

[7]  H. Liu,et al.  Temperature-dependent emission intensity and energy shift in InGaN/GaN multiple-quantum-well light-emitting diodes , 2003 .

[8]  E. Suh,et al.  Carrier dynamics of high-efficiency green light emission in graded-indium-content InGaN/GaN quantum wells: An important role of effective carrier transfer , 2004 .

[9]  J. Bergman,et al.  Origin of multiple peak photoluminescence in InGaN/GaN multiple quantum wells , 2000 .

[10]  S. Denbaars,et al.  Characterization of high-quality InGaN/GaN multiquantum wells with time-resolved photoluminescence , 1998 .

[11]  P. Hinze,et al.  Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. , 2005, Physical review letters.

[12]  Jinchai Li,et al.  Quantized level transitions and modification in InGaN∕GaN multiple quantum wells , 2008 .

[13]  Nelson Tansu,et al.  Growths of staggered InGaN quantum wells light-emitting diodes emitting at 520–525 nm employing graded growth-temperature profile , 2009 .

[14]  Lai Wang,et al.  Splitting of valance subbands in the wurtzite c-plane InGaN/GaN quantum well structure , 2008 .

[15]  Euijoon Yoon,et al.  Optical gain in InGaN∕GaN quantum well structures with embedded AlGaN δ layer , 2007 .

[16]  S. Nakamura,et al.  Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes , 1994 .

[17]  J. Chyi,et al.  Multiple-component photoluminescence decay caused by carrier transport in InGaN/GaN multiple quantum wells with indium aggregation structures , 2002 .

[18]  S. Nakamura,et al.  Spontaneous emission of localized excitons in InGaN single and multiquantum well structures , 1996 .

[19]  Tao Wang,et al.  Influence of the quantum-well thickness on the radiative recombination of InGaN/GaN quantum well structures , 2000 .

[20]  Michael S. Shur,et al.  Two mechanisms of blueshift of edge emission in InGaN-based epilayers and multiple quantum wells , 2002 .

[21]  R. Dupuis,et al.  Effect of internal electrostatic fields in InGaN quantum wells on the properties of green light emitting diodes , 2007 .

[22]  Albertas Žukauskas,et al.  Excitation power dynamics of photoluminescence in InGaN∕GaN quantum wells with enhanced carrier localization , 2005 .

[23]  Yujie J. Ding,et al.  Investigation of carrier dynamics on InAs quantum dots embedded in InGaAs∕GaAs quantum wells based on time-resolved pump and probe differential photoluminescence , 2006 .

[24]  Petr G. Eliseev,et al.  BLUE TEMPERATURE-INDUCED SHIFT AND BAND-TAIL EMISSION IN INGAN-BASED LIGHT SOURCES , 1997 .

[25]  M. Razeghi,et al.  Photoluminescence study of AlGaN-based 280 nm ultraviolet light-emitting diodes , 2003 .