论文信息 - The Enhanced Dielectric and Insulating Properties of Al2O3 Modified Ta2O5 Thin Films - 字舞流文

The Enhanced Dielectric and Insulating Properties of Al2O3 Modified Ta2O5 Thin Films

P. Joshi | S. Desu | C. S. Desu

[1] Jon-Paul Maria,et al. Alternative dielectrics to silicon dioxide for memory and logic devices , 2000, Nature.

[2] P. Joshi,et al. Structural and electrical properties of crystalline (1−x)Ta2O5–xAl2O3 thin films fabricated by metalorganic solution deposition technique , 1997 .

[3] W. F. Peck,et al. Improvement of the dielectric properties of Ta2O5 through substitution with Al2O3 , 1997 .

[4] T. Horikawa,et al. Dielectric Relaxation of (Ba, Sr)TiO3 Thin Films , 1995 .

[5] Shigeo Fujita,et al. Structural and Electrical Properties of Ta2O5 Grown by the Plasma-Enhanced Liquid Source CVD Using Penta Ethoxy Tantalum Source , 1993 .

[6] Hiroshi Shinriki,et al. UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs , 1991 .

[7] Y. Nakagawa,et al. Material constants of new piezoelectric Ta2O5 thin films , 1990 .

[8] J. G. Ryan,et al. Selective Studies of Crystalline Ta2 O 5 Films , 1986 .