论文信息 - 3D integration technology using W2W direct bonding and TSV for CMOS based image sensors

3D integration technology using W2W direct bonding and TSV for CMOS based image sensors

This paper presents a 3D integration technology for imager application using wafer level permanent oxide to oxide bonding and TSV process for backside illuminated (BSI) CMOS image sensor (CIS). The process allows the stacking and electrical connection of two chips-illuminated imager chip on top of a readout and image processing chip by mean of a via last style TSV.

[1] P. Enquist. Scalability and Low Cost of Ownership Advantages of Direct Bond Interconnect (DBI¯) as Drivers for Volume Commercialization of 3-D Integration Architectures and Applications , 2008 .

[2] Pierric Gueguen,et al. An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization , 2011 .

[3] T. Graves-abe,et al. Three-Dimensional Wafer Stacking Using Cu TSV Integrated with 45 nm High Performance SOI-CMOS Embedded DRAM Technology , 2014 .

[4] Laurent Clavelier,et al. (Invited) An Overview of Patterned Metal/Dielectric Surface Bonding: Mechanism, Alignment and Characterization , 2010 .