论文信息 - Determination of silicon unit cell parameters by precision measurements of Bragg plane spacings

Determination of silicon unit cell parameters by precision measurements of Bragg plane spacings

AbstractFrom the Bragg spacings of a whole set {hkl} of equivalent lattice plances related by symmetry, the axial lengths, axial angles and the volume of the unit cell of a highly pure silicon crystal are calculated. In crystal-to-crystal comparison measurements, relative aberrations from the cubic shape in the order of ±2×10−7 are found. With an average value $$\overline {d(220)} = (192,015.558 \pm 0.018)$$ fm, a volumev=(0.160193259±0.000000044) nm3 of the unit cell at 22.50°C and vacuum conditions is derived.

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