论文信息 - 3-D Mixed-Mode Simulation of Single Event Transients in SiGe HBT Emitter Followers and Resultant Hardening Guidelines

3-D Mixed-Mode Simulation of Single Event Transients in SiGe HBT Emitter Followers and Resultant Hardening Guidelines

This work presents 3-D mixed-mode simulation results of single event transients (SET) in SiGe HBT emitter followers. The impact of circuit design parameters, including biasing current and resistance are detailed. A simple increase of biasing emitter current is shown to be ineffective for hardening. Instead, during SET, the emitter voltage upset simply follows the base voltage upset due to the inherent nature of the emitter follower topology during circuit operation. The duration and the peak value of the base voltage upset are determined by the impedance and electric field between collector and base. As a result, the use of a smaller base biasing resistance is desirable for reducing SETs in emitter followers.

[1] John D. Cressler,et al. 3-D Simulation of Heavy-Ion Induced Charge Collection in SiGe HBTs on SOI , 2004 .

[2] Alvin J. Joseph,et al. 3-D simulation of heavy-ion induced charge collection in SiGe HBTs , 2003 .

[3] M. Turowski,et al. An Evaluation of Transistor-Layout RHBD Techniques for SEE Mitigation in SiGe HBTs , 2007, IEEE Transactions on Nuclear Science.

[4] Guofu Niu,et al. 3-D Simulation of SEU Hardening of SiGe HBTs Using Shared Dummy Collector , 2007, IEEE Transactions on Nuclear Science.

[5] J. Cressler,et al. Simulation of SEE-induced charge collection in UHV/CVD SiGe HBTs , 2000 .

[6] R. Reed,et al. Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGe HBTs , 2005, IEEE Transactions on Nuclear Science.

[8] A. B. Campbell,et al. Ion Track Shunt Effects in Multi-Junction Structures , 1985, IEEE Transactions on Nuclear Science.

[9] John D. Cressler,et al. A comparison of SEU tolerance in high-speed SiGe HBT digital logic designed with multiple circuit architectures , 2002 .