Frequency response of InP/InGaAsP/InGaAs avalanche photodiodes with separate absorption "grading" and multiplication regions
暂无分享,去创建一个
Joe C. Campbell | A. G. Dentai | W. S. Holden | G. J. Qua | J. Campbell | A. Dentai | W. Holden | G. Qua
[1] B. Kasper,et al. High-performance avalanche photodiode with separate absorption ‘grading’ and multiplication regions , 1983 .
[2] Chungho Lee,et al. Quasistatic Approximation for Semiconductor Avalanches , 1970 .
[3] T. Mikawa,et al. Multiplication-dependent frequency responses of InP/InGaAs avalanche photodiode , 1984 .
[4] S. Forrest,et al. Performance of In 0.53 Ga 0.47 As/InP avalanche photodiodes , 1982 .
[5] Osamu Mikami,et al. New InGaAs/InP avalanche photodiode structure for the 1-1.6 µm wavelength region , 1980 .
[6] S. R. Forrest,et al. Optical response time of In0.53Ga0.47As/InP avalanche photodiodes , 1982 .
[7] Yuichi Matsushima,et al. High-speed-response InGaAs/InP heterostructure avalanche photodiode with InGaAsP buffer layers , 1982 .
[8] H. Ando,et al. Reach-through type planar InGaAs/InP avalanche photodiode fabricated by continuous vapor phase epitaxy , 1984 .
[9] C. Bethea,et al. New long wavelength Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode grown by molecular beam epitaxy , 1983 .
[10] R. B. Emmons,et al. Avalanche‐Photodiode Frequency Response , 1967 .
[11] Karl Hess,et al. Theory of high-field transport of holes in GaAs and InP , 1984 .
[12] Katsuhiko Nishida,et al. InGaAsP heterostructure avalanche photodiodes with high avalanche gain , 1979 .
[13] I. M. Naqvi,et al. Effects of time dependence of multiplication process on avalanche noise , 1973 .
[14] Stephen R. Forrest. Gain-bandwidth-limited response in long-wavelength avalanche photodiodes , 1984 .
[15] T. Torikai,et al. High-speed planar-structure Inp/InGaAsP/InGaAs avalanche photodiode grown by VPE , 1984 .
[16] Factors affecting the ultimate capabilities of high speed avalanche photodiodes and a review of the state-of-the-art , 1973 .
[17] S. R. Forrest,et al. A high gain In0.53Ga0.47As/InP avalanche photodiode with no tunneling leakage current , 1981 .