Evaluation of thick-film resistor structural parameters based on noise index measurements

Abstract In this paper, a method for evaluation of the effective values of thick resistive film structural parameters such as number of conducting chains, number of tunneling barriers and contacts between metal particles in a chain as well as barrier widths, based on noise index and resistance measurements is presented. The method is applied to experimental results for 1, 10 and 100 k Ω/ sq test samples. A new parameter, noise reduced mobility or mobility index, formally incorporating both noise and transport properties of the film is used. Experimental results for thick-film resistors under pulse electrical stress show that this new parameter can be used as a quality indicator in quality evaluation of thick resistive films.

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