Integrated circuits and logic operations based on single-layer MoS2.
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Branimir Radisavljevic | Michael Brian Whitwick | Andras Kis | B. Radisavljevic | A. Kis | M. Whitwick
[1] Thomas Heine,et al. Influence of quantum confinement on the electronic structure of the transition metal sulfide T S 2 , 2011, 1104.3670.
[2] Richard Martel,et al. Erratum: “Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes” [Appl. Phys. Lett. 80, 3817 (2002)] , 2002 .
[3] B. Parkinson,et al. Detailed photocurrent spectroscopy of the semiconducting group VIB transition metal dichalcogenides , 1982 .
[4] R. Chau,et al. A 45nm Logic Technology with High-k+Metal Gate Transistors, Strained Silicon, 9 Cu Interconnect Layers, 193nm Dry Patterning, and 100% Pb-free Packaging , 2007, 2007 IEEE International Electron Devices Meeting.
[5] K. Mohanram,et al. Triple-mode single-transistor graphene amplifier and its applications. , 2010, ACS nano.
[6] S. Lebègue,et al. Electronic structure of two-dimensional crystals from ab-initio theory , 2009, 0901.0440.
[7] Kazuhito Tsukagoshi,et al. Low operating bias and matched input-output characteristics in graphene logic inverters. , 2010, Nano letters.
[8] Andre K. Geim,et al. Two-dimensional atomic crystals. , 2005, Proceedings of the National Academy of Sciences of the United States of America.
[9] A. Geim,et al. Two-dimensional gas of massless Dirac fermions in graphene , 2005, Nature.
[10] F. Schwierz. Graphene transistors. , 2010, Nature nanotechnology.
[11] Youngki Yoon,et al. How good can monolayer MoS₂ transistors be? , 2011, Nano letters.
[12] Fengnian Xia,et al. Graphene field-effect transistors with high on/off current ratio and large transport band gap at room temperature. , 2010, Nano letters.
[13] A. Radenović,et al. Single-layer MoS2 transistors. , 2011, Nature nanotechnology.
[14] T. Tang,et al. Direct observation of a widely tunable bandgap in bilayer graphene , 2009, Nature.
[15] Fabian Duerr,et al. Fractional quantum Hall effect and insulating phase of Dirac electrons in graphene , 2009, Nature.
[16] R. Frindt,et al. Physical properties of layer structures : optical properties and photoconductivity of thin crystals of molybdenum disulphide , 1963, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.
[17] E. Williams,et al. Atomic structure of graphene on SiO2. , 2007, Nano letters.
[18] P. Kim,et al. Energy band-gap engineering of graphene nanoribbons. , 2007, Physical review letters.
[19] Andre K. Geim,et al. Electric Field Effect in Atomically Thin Carbon Films , 2004, Science.
[20] A. Splendiani,et al. Emerging photoluminescence in monolayer MoS2. , 2010, Nano letters.
[21] S. Morrison,et al. Single-layer MoS2 , 1986 .
[22] H. Dai,et al. Chemically Derived, Ultrasmooth Graphene Nanoribbon Semiconductors , 2008, Science.
[23] Xiangfeng Duan,et al. High-performance thin-film transistors using semiconductor nanowires and nanoribbons , 2003, Nature.
[24] Jing Guo,et al. Performance Limits of Monolayer Transition Metal Dichalcogenide Transistors , 2011, IEEE Transactions on Electron Devices.
[25] Frank Schwierz,et al. Nanoelectronics: Flat transistors get off the ground. , 2011, Nature nanotechnology.
[26] G. Fudenberg,et al. Ultrahigh electron mobility in suspended graphene , 2008, 0802.2389.
[27] Valeria Russo,et al. Integrated complementary graphene inverter , 2009, 0904.2745.
[28] Jonathan N. Coleman,et al. Two‐Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials. , 2011 .
[29] L. Gomez,et al. Electron Transport in Strained-Silicon Directly on Insulator Ultrathin-Body n-MOSFETs With Body Thickness Ranging From 2 to 25 nm , 2007, IEEE Electron Device Letters.
[30] J. Shan,et al. Atomically thin MoS₂: a new direct-gap semiconductor. , 2010, Physical review letters.
[31] R. Frindt,et al. Single Crystals of MoS2 Several Molecular Layers Thick , 1966 .
[32] F. Guinea,et al. Coulomb blockade in graphene nanoribbons. , 2007, Physical review letters.
[33] K. Tsukagoshi,et al. Complementary-like graphene logic gates controlled by electrostatic doping. , 2011, Small.
[34] K. Mistry,et al. The High-k Solution , 2007, IEEE Spectrum.
[35] Norbert Kruse,et al. Single-layer MoS2 on mica: studies by means of scanning force microscopy , 1993 .
[36] Kang L. Wang,et al. High-speed graphene transistors with a self-aligned nanowire gate , 2010, Nature.
[37] B. Radisavljevic,et al. Visibility of dichalcogenide nanolayers , 2010, Nanotechnology.