论文信息 - High-Field FMR Investigation of Epitaxially Grown Fe4 N Films on a MgO(001) Substrate

High-Field FMR Investigation of Epitaxially Grown Fe4 N Films on a MgO(001) Substrate

Epitaxially grown Fe 4 N thin film on a MgO(001) substrate has been examined by high-field ferromagnetic resonance (FMR) spectroscopy. When the magnetic field was applied parallel (along the in-plane direction) and perpendicular to the substrate, the resonance appeared at 2.4 and 4.9 T at 94 GHz, respectively. The g-value and the effective magnetization were estimated to be 2.13 and 191 emu g - 1 , respectively, using the relation derived from the Landau-Lifshitz equation of motion. Superconducting quantum interference device (SQUID) measurements also showed that the Fe 4 N epitaxial film has a large magnetization anisotropy, supporting that the magnetic moments lie along the in-plane direction.

[1] Y. Kawata,et al. Growth of Fe4N epitaxial layers displaying anomalous light reflectivity modulated by an external magnetic field , 2001 .

[2] D. Boerma,et al. High-quality epitaxial iron nitride films grown by gas-assisted molecular-beam epitaxy , 2001 .

[3] T. Nakamura,et al. Preparation of FeN thin films by chemical vapor deposition using a chloride source , 2000 .

[4] T. Fujii,et al. New Vapor Phase Growth Method of FeN Thin Films Using a Chloride Source , 1999 .

[5] A. Sakuma,et al. Magnetic and Mössbauer studies of single‐crystal Fe16N2 and Fe‐N martensite films epitaxially grown by molecular beam epitaxy (invited) , 1994 .

[6] T. Tiefel,et al. Synthesis and magnetic properties of Fe4N and (Fe, Ni)4N sheets , 1992 .

[7] R. Dronskowski,et al. Theoretical calculations on the structures, electronic and magnetic properties of binary 3d transition metal nitrides , 1999 .