High-Bitrate-Measurement-System-Oriented Lower-Jitter 113-Gbit/s 2: 1 Multiplexer and 1: 2 Demultiplexer Modules Using 1-µm InP/InGaAs/InP Double Heterojunction Bipolar Transistors

[1]  Koichi Murata,et al.  Very-high-speed selector IC using InP/InGaAs heterojunction bipolar transistors , 2002 .

[2]  M. Moller,et al.  Challenges in the Cell-Based Design of Very-High-Speed SiGe-Bipolar ICs at 100 Gb/s , 2008, IEEE Journal of Solid-State Circuits.

[3]  C. Schubert,et al.  112 Gb/s field trial of complete ETDM system based on monolithically integrated transmitter & receiver modules for use in 100GbE , 2010, 36th European Conference and Exhibition on Optical Communication.

[4]  M. Schlechtweg,et al.  80 Gbit/s monolithically integrated clock and data recovery circuit with 1:2 DEMUX using InP-based DHBTs , 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

[5]  Y. Amano,et al.  Low-power 100 Gbit/s selector IC using InP/InGaAs DHBTs , 2008 .

[6]  K. Murata,et al.  100-Gb/s multiplexing and demultiplexing IC operations in InP HEMT technology , 2004, IEEE Journal of Solid-State Circuits.

[7]  Y. Matsuoka,et al.  A 120-Gbit/s 520-mVPP multiplexer IC using 1-µm self-aligned InP/InGaAs/InP DHBT with emitter mesa passivation ledge , 2010, 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM).

[8]  M. Schlechtweg,et al.  107–112 Gbit/s fully integrated CDR/1:2 DEMUX using InP-based DHBTs , 2010, The 5th European Microwave Integrated Circuits Conference.

[9]  Yutaka Matsuoka,et al.  A 120-Gbit/s 1.27-W 520-mVpp 2: 1 Multiplexer IC Using Self-Aligned InP/InGaAs/InP DHBTs with Emitter Mesa Passivation , 2010, IEICE Trans. Electron..

[10]  T. Kjellberg,et al.  A 165-Gb/s 4:1 multiplexer in InP DHBT technology , 2005, IEEE Compound Semiconductor Integrated Circuit Symposium, 2005. CSIC '05..

[11]  J. Rosenzweig,et al.  InP DHBT-based ICs for 100 Gbit/s data transmission , 2008, 2008 20th International Conference on Indium Phosphide and Related Materials.

[12]  Y. Amamiya,et al.  Low supply voltage operation of over-40-Gb/s digital ICs based on parallel-current-switching latch circuitry , 2005, IEEE Journal of Solid-State Circuits.

[13]  Y. Amamiya,et al.  120-Gb/s multiplexing and 110-Gb/s demultiplexing ICs , 2004, IEEE Journal of Solid-State Circuits.

[14]  T. Suzuki,et al.  144-Gbit/s selector and 100-Gbit/s 4:1 multiplexer using InP HEMTs , 2004, 2004 IEEE MTT-S International Microwave Symposium Digest (IEEE Cat. No.04CH37535).

[15]  Agnieszka Konczykowska,et al.  High quality 80 Gbit/s InP DHBT selector and its use for NRZ-RZ conversion , 2003 .

[16]  C. Schubert,et al.  Ultra-High-Speed Transmitter and Receiver ICs for 100 Gbit/s Ethernet Using InP DHBTs , 2011, 2011 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS).

[17]  Rolf Aidam,et al.  Over 80 Gbit/s 2:1 multiplexer and low power selector ICs using InP/InGaAs DHBTs , 2005 .

[18]  Eiichi Sano,et al.  70-Gbit/s Multiplexer and 50-Gbit/s Decision IC Modules Using InAlAs/InGaAs/InP HEMTs , 2000 .

[19]  M. Schlechtweg,et al.  InP-based DHBT technology for high-speed mixed signal and digital applications , 2009, 2009 IEEE International Conference on Indium Phosphide & Related Materials.

[20]  Rolf Aidam,et al.  InP DHBT Based IC Technology for over 80 Gbit/s Data Communications , 2006, IEICE Trans. Electron..

[21]  Z. Yamazaki,et al.  Over-100-Gb/s 1:2 Demultiplexer Based on InP HBT Technology , 2007, IEEE Journal of Solid-State Circuits.

[22]  Yutaka Matsuoka,et al.  On the Emitter Resistance of High-Performance GaAs- and InP-Based Heterojunction Bipolar Transistors , 2008 .

[23]  Michael Schlechtweg,et al.  InP DHBT-based 1:2 DEMUX IC operating at up to 120 Gbit/s , 2009 .

[24]  M. Meghelli.  A 108Gb/s 4:1 multiplexer in 0.13/spl mu/m SiGe-bipolar technology , 2004, 2004 IEEE International Solid-State Circuits Conference (IEEE Cat. No.04CH37519).