Introduction: Ion implantation technology special issue

This special issue of MRS Advances focuses on discussion of major challenges in current and emerging technologies related to implant/doping and annealing processes, device applications, equipment, metrology, and modeling. Contributions from a wide range of topics, from fundamental research to industrial applications and equipment, were requested. Contributed papers were solicited in the following areas:

[1]  Journal Highlights , 2023, MRS bulletin.

[2]  P. Fuller,et al.  Dopant gas purity and adsorbent stability , 2022, MRS Advances.

[3]  P. Pichler,et al.  Comparison of annealing quality after 3e15/cm^2 50 keV BF_2^+ implant between rapid thermal annealing and furnace annealing , 2022, MRS Advances.

[4]  S. Tiku,et al.  Advanced process control method for inline isolation implant monitoring in III–V GaAs semiconductor fabrication , 2022, MRS Advances.

[5]  K. Suguro.  Where is the annealing technology going for better device performance? , 2022, MRS Advances.

[6]  N. Collaert,et al.  Parasitic side channel formation due to ion implantation isolation of GaN HEMT , 2022, MRS Advances.

[7]  T. Nagayama,et al.  The diffusion analysis of implanted heavy metals in 4H-SiC , 2022, MRS Advances.

[8]  R. Nipoti,et al.  Ion implantation and activation of aluminum in bulk 3C-SiC and 3C-SiC on Si , 2022, MRS Advances.

[9]  Ying Tang,et al.  Performance and reliability of the fourth generation of Safe Delivery Source® (SDS®4) in the ion implantation application , 2022, MRS Advances.

[10]  Y. Berencén,et al.  A snapshot review on flash lamp annealing of semiconductor materials , 2022, MRS Advances.

[11]  K. Watari,et al.  New control system of the multiple filaments in the large ion source for ion doping system iG6 Ver.2 , 2022, MRS Advances.

[12]  R. Radel,et al.  New ECR source ion implanter with advanced wafer temperature control for material modification , 2022, MRS Advances.