A Review and Comparison of One- and Two-Dimensional Simulations of Solar Cells Featuring Selective Emitters

The optimization of the metallization pattern and the emitter doping profiles and geometry for selective emitter solar cells require reliable and fast simulation models. The computational effort of one-dimensional models is usually much lower than that of two-dimensional models, which in turn allow for more realistic calculations. We review the literature on one-dimensional and two-dimensional models for the simulation of selective emitter solar cells. We compare the approaches for various emitter profiles and widths of the highly doped areas. We show that the one-dimensional and the two-dimensional approaches show similar trends and only small deviations concerning the short-circuit current density and the open-circuit voltage. Concerning the fill factor and the efficiency, the agreement is still reasonable for the investigated selective emitter structures. However, the one-dimensional approach leads to a more profound understanding and a more realistic simulation of the fill factor.

[1]  Martin A. Green,et al.  Self-consistent optical parameters of intrinsic silicon at 300 K including temperature coefficients , 2008 .

[2]  F. Lindholm,et al.  Systematic analytical solutions for minority-carrier transport in semiconductors with position-dependent composition, with application to heavily doped silicon , 1986, IEEE Transactions on Electron Devices.

[3]  S. Rein,et al.  Fill factor analysis of solar cells' current–voltage curves , 2010 .

[4]  D. Nobili,et al.  Precipitation as the phenomenon responsible for the electrically inactive phosphorus in silicon , 1982 .

[5]  L. A. Verhoef,et al.  An analytical solution for the collection efficiency of solar-cell emitters with arbitrary doping profile , 1990 .

[6]  Pritpal Singh,et al.  Two dimensional numerical modeling of a silicon solar cell with deep contacts in the emitter , 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

[7]  Bui Tuong Phong Illumination for computer generated pictures , 1975, Commun. ACM.

[8]  Hiroshi Kodera,et al.  Diffusion Coefficients of Impurities in Silicon Melt , 1963 .

[9]  Andreas Wolf,et al.  Modelling carrier recombination in highly phosphorus-doped industrial emitters , 2011 .

[10]  A. Cuevas,et al.  On the systematic analytical solutions for minority-carrier transport in nonuniform doped semiconductors: application to solar cells , 1993 .

[11]  Pritpal Singh,et al.  Two dimensional numerical modeling of a silicon solar cell with selective emitter configuration , 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

[12]  Ralf Preu,et al.  Recombination at Metal-Emitter Interfaces of Front Contact Technologies for Highly Efficient Silicon Solar Cells , 2011 .

[13]  R. Mertens,et al.  Recent improvements in the screenprinting technology and comparison with the buried contact technology by 2D-simulation , 1996 .

[14]  P. Siffert,et al.  A model for laser induced diffusion , 1983 .

[15]  R. F. Wood,et al.  Macroscopic theory of pulsed laser annealing , 1980 .

[16]  Stefan Kontermann Characterization and modeling of contacting crystalline silicon solar cells , 2009 .

[17]  H. Mäckel,et al.  On the determination of the emitter saturation current density from lifetime measurements of silicon devices , 2012 .

[18]  D.B.M. Klaassen,et al.  A unified mobility model for device simulation—I. Model equations and concentration dependence , 1992 .

[19]  Impact of lateral junction on selective emitter solar cell performance , 1998 .

[20]  C. Fiegna,et al.  2-D numerical simulation and modeling of monocrystalline selective emitter solar cells , 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

[21]  P. Grabitz,et al.  0.4% absolute efficiency gain of industrial solar cells by laser doped selective emitter , 2009, 2009 34th IEEE Photovoltaic Specialists Conference (PVSC).

[22]  Andres Cuevas,et al.  Co-optimisation of the Emitter Region and the Metal Grid of Silicon Solar Cells , 2000 .

[23]  N. Stem,et al.  Phosphorus emitter and metal - grid optimization for homogeneous (n+p) and double-diffused (n++n+p) emitter silicon solar cells , 2009 .

[24]  Pietro P. Altermatt,et al.  Models for numerical device simulations of crystalline silicon solar cells—a review , 2011 .

[25]  F. Granek,et al.  Comparison of emitter saturation current densities determined by injection‐dependent lifetime spectroscopy in high and low injection regimes , 2012 .

[26]  D. A. Clugston,et al.  PC1D version 5: 32-bit solar cell modeling on personal computers , 1997, Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.

[27]  G. Hahn Status of Selective Emitter Technology , 2010 .

[28]  R. Preu,et al.  Influence of Different Laser Parameters in Laser Doping from Phosphosilicate Glass , 2009 .

[29]  Ralf Preu,et al.  Quantum efficiency analysis of highly doped areas for selective emitter solar cells , 2011 .

[30]  A. Cuevas,et al.  The combined effect of non-uniform illumination and series resistance on the open-circuit voltage of solar cells , 1984 .

[31]  P. Altermatt,et al.  Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing , 2003 .

[32]  D.B.M. Klaassen,et al.  A unified mobility model for device simulation—II. Temperature dependence of carrier mobility and lifetime , 1992 .

[33]  Nobili,et al.  Dopant and carrier concentration in Si in equilibrium with monoclinic SiP precipitates. , 1996, Physical review. B, Condensed matter.

[34]  G. Schubert Thick Film Metallisation of Crystalline Silicon Solar Cells : Mechanisms, Models and Applications , 2006 .

[35]  D. Tonini,et al.  2-D Numerical analysis of the impact of the highly-doped profile on selective emitter solar cell performance , 2011, 2011 37th IEEE Photovoltaic Specialists Conference.

[36]  Andreas Wolf,et al.  Influence of doping profile of highly doped regions for selective emitter solar cells , 2010, 2010 35th IEEE Photovoltaic Specialists Conference.

[37]  Andreas Schenk,et al.  Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation , 1998 .

[38]  Chunlan Zhou,et al.  Co‐optimization of emitter profile and metal grid of selective emitter silicon solar cells , 2012 .

[39]  Jürgen Schumacher,et al.  Numerical modeling of highly doped Si:P emitters based on Fermi–Dirac statistics and self-consistent material parameters , 2002 .

[40]  H. Macleod,et al.  Thin-Film Optical Filters , 1969 .

[41]  N. Stem,et al.  Physical limitations for homogeneous and highly doped n-type emitter monocrystalline silicon solar cells , 2004 .

[42]  P. Vinod SEM and specific contact resistance analysis of screen-printed Ag contacts formed by fire-through process on the shallow emitters of silicon solar cell , 2009 .

[43]  D. Schroder,et al.  Solar cell contact resistance—A review , 1984, IEEE Transactions on Electron Devices.

[44]  N. Stem,et al.  Studies of phosphorus Gaussian profile emitter silicon solar cells , 2001 .