Design of 3.1-10.6GHz ultra-wideband CMOS low noise amplifier with current reuse technique
暂无分享,去创建一个
[1] R. Gharpurey. A broadband low-noise front-end amplifier for ultra wideband in 0.13-/spl mu/m CMOS , 2004, IEEE Journal of Solid-State Circuits.
[2] Guo-Wei Huang,et al. Micromachined CMOS LNA and VCO by CMOS-compatible ICP deep trench technology , 2006 .
[3] Liang-Hung Lu,et al. Design of Ultra-Low-Voltage RF Frontends With Complementary Current-Reused Architectures , 2007, IEEE Transactions on Microwave Theory and Techniques.
[4] A.A. Abidi,et al. A 3-10-GHz low-noise amplifier with wideband LC-ladder matching network , 2004, IEEE Journal of Solid-State Circuits.
[5] Jen-How Lee,et al. 0.18 μm 3.1-10.6 GHz CMOS UWB LNA with 11.4±0.4 dB gain and 100.7± 17.4 ps group-delay , 2007 .
[6] V. Srinivasa Somayazulu,et al. Ultrawideband radio design: the promise of high-speed, short-range wireless connectivity , 2004, Proceedings of the IEEE.
[7] Huei Wang,et al. A low-voltage and variable-gain distributed amplifier for 3.1-10.6 GHz UWB systems , 2006 .
[8] D. J. Allstot,et al. A fully integrated 0.5-5.5 GHz CMOS distributed amplifier , 2000 .
[9] Yang Lu,et al. A novel CMOS low-noise amplifier design for 3.1- to 10.6-GHz ultra-wide-band wireless receivers , 2006, IEEE Transactions on Circuits and Systems I: Regular Papers.
[10] Kalyan Bhattacharyya,et al. Microwave CMOS traveling wave amplifiers: Performance and temperature effects , 2004 .
[11] A. Bevilacqua,et al. An ultrawideband CMOS low-noise amplifier for 3.1-10.6-GHz wireless receivers , 2004, IEEE Journal of Solid-State Circuits.