Metal-organic vapor phase epitaxial growth of high-quality ZnO films on Al_2O_3(00·1)

(00?1)substrates using low-pressure metalorganic vapor phase epitaxy. The reactants for thegrowth were diethylzinc and oxygen. Growth temperature, one of the importantexperimental parameters for epitaxial layers, was optimized. The films grown at500 °C exhibited good crystallinity and strong ultraviolet absorption and emission.Photoluminescence spectra of the films showed a dominant excitonic emission with aweak deep level emission. More importantly, a strong stimulated emission peak wasobserved even at room temperature.I. INTRODUCTIONMuch attention has been paid recently to ZnO forshort-wavelength photonic device applications since ithas a direct band gap energy of 3.3 eV at room tempera-ture.

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