Performance Improvement of N-Type $\hbox{TiO}_{x}$ Active-Channel TFTs Grown by Low-Temperature Plasma-Enhanced ALD

We report on performance improvement of n-type oxide-semiconductor thin-film transistors (TFTs) based on TiO<sub>x</sub> active channels grown at 250degC by plasma-enhanced atomic layer deposition. TFTs with as-grown TiO<sub>x</sub> films exhibited the saturation mobility (mu<sub>sat</sub>) as high as 3.2 cm<sup>2</sup>/V ldr s but suffered from the low on-off ratio (I<sub>ON</sub>/I<sub>OFF</sub>) of 2.0 times 10<sup>2</sup> ldr N<sub>2</sub>O plasma treatment was then attempted to improve I<sub>ON</sub>/I<sub>OFF</sub>. Upon treatment, the TiO<sub>x</sub> TFTs exhibited I<sub>ON</sub>/I<sub>OFF</sub> of 4.7 times 10<sup>5</sup> and mu<sub>sat</sub> of 1.64 cm<sup>2</sup>/V ldr s, showing a much improved performance balance and, thus, demonstrating their potentials for a wide variety of applications such as backplane technology in active-matrix displays and radio-frequency identification tags.

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