The simulation of behaviors of photodetectors under pulsed laser irritation

Precise simulation of transient electrical behaviors of photodetectors under laser irradiation is becoming an increasingly concern. It not only can allow a detailed study and analysis of complex phenomena that cannot be carried out by experiments, but gives valuable information about the physical mechanisms which ultimately determine the response of the photodetectors. Finite difference numerical technique is adopted in the simulation to calculate the current response of photodetectors under pulsed laser irritation in this paper. To simulation the behaviors of photodetectors under pulsed laser irritation, the transport and trapping of carries and external circuit effects, including load resistance, junction capacitance, and parasitic capacitance, are considered. The basic equations governing the carrier behaviors are solved, including Poisson’s equation, the carrier motion equations, and the carrier continuity equations. The simulated transient carrier density and velocities are present, as well as corresponding transient electric field distributions. The behaviors of electrons and holes and its contributions to the external current response are analyzed. Then a general and brief image of the transient progress of photodetectors under pulsed laser irritation is established. How the carrier is induced, transported, and trapped and whether they make any significant contribution to the external current response are discussed. Besides, bias dependent response is also studied. Higher bias will improver the behaviors of photodetectors under pulsed laser irritation. The simulated results and theory analysis will show valuable clue for future research on the behaviors of photodetectors irradiated by pulsed laser.