Photolytic absorbate removal during the growth of aluminium nitride by remote microwave plasma chemical vapour deposition

[1]  M. Khan,et al.  High quality AlxGa1−xN grown by metalorganic chemical vapor deposition using trimethylamine alane as the aluminum precursor , 1994 .

[2]  B. Wood,et al.  Preparation and Characterization of Trimethylamine-Alane Thin Films on Oxidized Silicon , 1994 .

[3]  J. W. Rogers,et al.  Initial stages of AlN thin‐film growth on alumina using trimethylamine alane and ammonia precursors , 1994 .

[4]  A. Bellosi,et al.  Degradation of dense AlN materials in aqueous environments , 1993 .

[5]  S. J. Pearton,et al.  Dry and wet etching characteristics of InN, AlN, and GaN deposited by electron cyclotron resonance metalorganic molecular beam epitaxy , 1993 .

[6]  R. Paine,et al.  The systems LiAlH4/NH4X and N2H5Cl as precursor sources for AlN , 1993 .

[7]  M. Gauthier,et al.  A conductometric analysis of mesogel formation by ABA block copolymers in w/o microemulsions , 1993 .

[8]  C. Wu,et al.  AlN thin films prepared by plasma-enhanced chemical vapour deposition , 1992 .

[9]  R. Muenchausen,et al.  Reactive Laser Ablation Synthesis of Nanosize Aluminum Nitride , 1992 .

[10]  R. Crooks,et al.  Electrochemical synthesis of ceramic materials. 2. Synthesis of aluminum nitride (AlN) and an AlN polymer precursor: chemistry and materials characterization , 1992 .

[11]  K. W. Hipps,et al.  Infrared study of ion beam deposited hydrogenated aluminum nitride thin films. 2. Effect of deuterium substitution , 1992 .

[12]  S. Shin,et al.  In situ studies of the effect of various gaseous species and ultraviolet illumination on the dark currents of HgMnCdTe and HgCdTe short‐wavelength infrared diodes , 1992 .

[13]  T. Tansley,et al.  LASER-INDUCED CHEMICAL VAPOR DEPOSITION OF ALN FILMS , 1990 .

[14]  T. Motooka,et al.  Mechanisms of Al film growth by ultraviolet laser photolysis of trimethylaluminum , 1986 .

[15]  H. Demiryont,et al.  Optical properties of aluminum oxynitrides deposited by laser-assisted CVD. , 1986, Applied optics.

[16]  A. Takase,et al.  Infra-Red Absorption Spectroscopic Study of β-Sialons in the System Si3N4–Al2O3·AlN , 1982 .

[17]  Inspec,et al.  Properties of group III nitrides , 1994 .

[18]  P. Danielson How to reduce contamination by oil and water in vaccum systems , 1993 .

[19]  J. Parmeter,et al.  Metal CVD for microelectronic applications: An examination of surface chemistry and kinetics , 1993 .

[20]  E. Gulari,et al.  The low temperature catalyzed chemical vapor deposition and characterization of aluminum nitride thin films , 1992 .

[21]  Y. Hatanaka,et al.  Reactions of atomic nitrogen and trimethyl aluminum downstream from a nitrogen microwave plasma , 1990 .

[22]  N. Hieu,et al.  Photodesorption studies of CO2 from an oxygen‐saturated silicon(100) surface , 1983 .

[23]  N. Mott,et al.  Electronic Processes In Non-Crystalline Materials , 1940 .