A model for single-event transients in comparators

A two-step modeling approach is developed for single-event transients in linear circuits that uses the PISCES device simulation program to calculate transient currents in key internal transistor structures. Those currents are then applied at the circuit level using the SPICE circuit analysis program. The results explain the dependence of transients on input differential voltage, as well as the dependence of transient signals on output loading conditions. Error rate predictions based on laboratory testing and modeling are in close agreement with the observed number of "trips" in comparators within power control modules that have operated in a deep space environment for nearly three years.

[1]  C. Barnes,et al.  A comparison of gamma-irradiation-induced degradation in amphoterically Si-doped GaAs LED's and Zn-diffused GaAs LED's , 1979, IEEE Transactions on Electron Devices.

[2]  A. L. Barry,et al.  The energy dependence of lifetime damage constants in GaAs LEDs for 1-500 MeV protons , 1995 .

[3]  Theodore I. Kamins,et al.  Device Electronics for Integrated Circuits , 1977 .

[4]  K. Ikeda,et al.  Design parameters of frequency response of GaAs—(Ga,Al)As double heterostructure LED's for optical communications , 1977, IEEE Transactions on Electron Devices.

[5]  Stephen LaLumondiere,et al.  Single event upset (SEU) sensitivity dependence of linear integrated circuits (ICs) on bias conditions , 1997 .

[6]  Allan H. Johnston,et al.  Proton degradation of light-emitting diodes , 1999 .

[7]  Charles E. Barnes,et al.  Total dose and proton damage in optocouplers , 1996 .

[8]  John Choma,et al.  Mixed-mode PISCES-SPICE coupled circuit and device solver , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[9]  W. A. Kolasinski,et al.  Cost-effective numerical simulation of SEU , 1988 .

[10]  R. L. Woodruff,et al.  Three-dimensional numerical simulation of single event upset of an SRAM cell , 1993 .

[11]  Sram Cell.  Three-Dimensional Numerical Simulation of Single Event Upset of an , 1993 .

[12]  R. Reed,et al.  Energy dependence of proton damage in AlGaAs light-emitting diodes , 2000 .

[13]  Kenneth F. Galloway,et al.  200 MeV proton damage effects on multi-quantum well laser diodes , 1997 .

[14]  H. R. Schwartz,et al.  Heavy ion and proton induced single event transients in comparators , 1996 .

[15]  H.S. Kim,et al.  Current single event effects and radiation damage results for candidate spacecraft electronics , 2002, IEEE Radiation Effects Data Workshop.

[16]  Stephen LaLumondiere,et al.  Observation of single event upsets in analog microcircuits , 1993 .

[17]  Paul E. Dodd,et al.  Device simulation of charge collection and single-event upset , 1996 .

[18]  A. B. Campbell,et al.  Ion Track Shunt Effects in Multi-Junction Structures , 1985, IEEE Transactions on Nuclear Science.

[19]  T. L. Turflinger,et al.  Single-event effects in analog and mixed-signal integrated circuits , 1996 .

[20]  Cheryl J. Dale,et al.  Displacement damage in GaAs structures , 1988 .

[21]  B. H. Rose,et al.  Proton damage effects on light emitting diodes , 1982 .

[22]  P. S. Winokur,et al.  Three-dimensional simulation of charge collection and multiple-bit upset in Si devices , 1994 .

[23]  H. Henschel,et al.  Radiation effects in light emitting diodes, laser diodes, photodiodes, and optocouplers , 1993, RADECS 93. Second European Conference on Radiation and its Effects on Components and Systems (Cat. No.93TH0616-3).

[24]  Larry D. Edmonds,et al.  Electric currents through ion tracks in silicon devices , 1998 .

[25]  Robert Ecoffet,et al.  Observation of heavy ion induced transients in linear circuits , 1994, Workshop Record. 1994 IEEE Radiation Effects Data Workshop.

[26]  A. H. Johnston,et al.  Single-event upset effects in optocouplers , 1998 .

[27]  E. G. Stassinopoulos,et al.  Proton-induced transients in optocouplers: in-flight anomalies, ground irradiation test, mitigation and implications , 1997 .