Non volatile memory device

And first data latch portion and the second data latch section in which data is stored for setting the threshold voltage state of the program target cell a page buffer of the non-volatile memory device of the present invention, the data is stored about whether or not a program or program inhibit, the first according to the data applied to the data and the sense node to be set to the first node, the data latch portion to ground or floating the first verify signal output program target cell is one-bit path to determine whether the program to more than the verify voltage determiner and a first data latch portion is the opposite of the data set in the first node to float the second verify applying a power supply voltage to the signal output terminal or the second verify signal output according to the data set in the second node, the latch portion first data program target cell is completed path to determine whether the program to more than the verify voltage It includes medical judgment unit. Pass-bit, 1-bit path