Horizontal p-i-n high-speed Ge waveguide detector on large cross-section SOI waveguide

We report a novel high-speed Ge photodetector on a large cross-section SOI waveguide platform. The device is butt-coupled with waveguide using a horizontal p-i-n junction configuration to enable highspeed operation. A very compact Ge detector with an active area of only 0.8 × 10 μm2, greater than 32GHz optical bandwidth at -1V of reverse bias, and a responsivity of 1.1A/W is demonstrated.

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