A W-band InAs/AlSb low-noise/low-power amplifier

The first W-band antimonide based compound semiconductor low-noise amplifier has been demonstrated. The compact 1.4-mm/sup 2/ three-stage co-planar waveguide amplifier with 0.1-/spl mu/m InAs/AlSb high electron mobility transistor devices is fabricated on a 100-/spl mu/m GaAs substrate. Minimum noise-figure of 5.4dB with an associated gain of 11.1 dB is demonstrated at a total chip dissipation of 1.8 mW at 94 GHz. Biased for higher gain, 16/spl plusmn/1 dB is measured over a 77-103 GHz frequency band.

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