Scaling Aspects of Silicon Spin Qubits

To harness the potential of quantum mechanics for quantum computation applications, one of the main challenges is to scale up the number of qubits. The work presented in this dissertation is concerned with several aspects that are relevant in the quest of scaling up quantum computing systems based on spin qubits in silicon. Few-qubit experiments are maturing quickly, but simultaneously the lacuna between them and large-scale quantum computers is filled with a combination of science and engineering challenges. The challenges that are addressed in this dissertation are reliable and reproducible sample fabrication, qubit resilience to temperature, spatial correlations in the noise affecting the qubits, and co-integration of qubits with classical control electronics. I start with describing the development of an integration scheme for silicon spin qubits in an academic cleanroom environment, as several research groups have demonstrated over the last years. This has allowed them to successfully fabricate and operate silicon spin qubit devices. The development of such a scheme is crucial for the fabrication of proof-of-principle devices, and the testing of several design variations for more and more complex qubit devices, before transferring the optimal designs to industrial foundries that are generally less flexible. Moreover, it is essential for performing paramount few-qubit experiments in the near term. The developed scheme has been successfully implemented in the next chapter of this thesis. In the first experiment, we investigate the effect of temperature on the spin lifetime, as a first step towards higher temperature operation of silicon spin qubits. Spin qubit operation at elevated temperatures will be required to allow for co-integration of qubits with classical control electronics on a single chip, since the heat load associated with this electronics will be too much to deal with at the current qubit operation temperature of ∼10 mK. At a temperature of ∼1-4 K, significantly more cooling power is available (see for example CERN's Large Hadron Collider). Such co-integration would alleviate the interconnect bottleneck and facilitate the implementation of local control in large-scale devices. We find only a modest temperature dependence and measure a spin relaxation time of 2.8 ms at 1.1 K (still much longer than the record spin dephasing time measured in such a system). In addition, we present a theoretical model and use it in combination with our experimentally obtained parameters to demonstrate that the spin relaxation time can be enhanced by low magnetic field operation and by employing high-valley-splitting devices. Together with more recent work, this experiment demonstrates no fundamental limitations to prevent high-temperature operation of silicon spin qubits. Simultaneously, bringing classical control electronics to lower temperatures also is an active research area. The second experiment uses maximally entangled Bell states of two qubits to study spatial correlations in the noise acting on those two qubits. Spatial correlations in qubit errors hinder quantum error corrections schemes that will be required for fault-tolerant large-scale quantum computers, as these schemes are commonly derived under the assumption of negligible correlations in qubit errors. Therefore, it is important to know to what extent the noise causing these errors is correlated. We find only modest spatial correlations in the noise and gain insight in their origin. The data is in accordance with decoherence being dominated by a combination of nuclear spins and multiple distant charge fluctuators coupling asymmetrically to the two qubits. We recommend to perform similar experiments in isotopically purified silicon to eliminate the effect of nuclear spins and in isolation study spatial correlations in charge noise. Furthermore, our insights show how correlations can be either maximized or minimized through qubit device design. For these reasons, the prospects for the development and implementation of quantum error correction schemes in fault-tolerant large-scale quantum computers are promising. Finally, after having studied several aspects that are relevant to determine the suitability of silicon spin qubits for large-scale quantum computation in the preceding experiments, we propose a concrete physical implementation of co-integrated spin qubits with classical control electronics in a sparse spin qubit array. While the community usually claims compatibility of silicon spin qubits with conventional CMOS fabrication, existing proposals make assumptions that remain to be validated. Implementing quantum error correction protocols in a sparse array has been studied, but the description of a physical implementation was largely missing. The sparseness of the array allows for integration of local control electronics, as shown to be promising earlier in this thesis. Specifically, we propose to implement sample-and-hold circuits alongside the qubit circuitry that would allow to offset inhomogeneity in the qubit array. This enables individual local control and shared global control, resulting in an efficient line scaling. The scalable unit cell design fits 220 (≈106) qubits in ∼150 mm2. We assess the feasibility of the proposed scheme, as well as its physical implementation and the associated footprint, line scaling and interconnect density.

[1]  Xuedong Hu,et al.  Spin relaxation in a Si quantum dot due to spin-valley mixing , 2014, 1408.1666.

[2]  A. Dzurak,et al.  Gate-defined quantum dots in intrinsic silicon. , 2007, Nano letters.

[3]  L. Vandersypen,et al.  Spin-relaxation anisotropy in a GaAs quantum dot. , 2014, Physical review letters.

[4]  Andrew S. Dzurak,et al.  Gate-based single-shot readout of spins in silicon , 2018, Nature Nanotechnology.

[5]  Spin-lattice relaxation in Si quantum dots , 2002, cond-mat/0211575.

[6]  John Preskill,et al.  Quantum Computing in the NISQ era and beyond , 2018, Quantum.

[7]  M. Lagally,et al.  Repetitive Quantum Nondemolition Measurement and Soft Decoding of a Silicon Spin Qubit , 2019, Physical Review X.

[8]  Jacob M. Taylor,et al.  Resonantly driven CNOT gate for electron spins , 2018, Science.

[9]  Lorenza Viola,et al.  Multiqubit Spectroscopy of Gaussian Quantum Noise , 2016, 1609.01792.

[10]  Xuedong Hu,et al.  Fast hybrid silicon double-quantum-dot qubit. , 2011, Physical review letters.

[11]  J. P. Dehollain,et al.  An addressable quantum dot qubit with fault-tolerant control-fidelity. , 2014, Nature nanotechnology.

[12]  P. T. Eendebak,et al.  Computer-automated tuning of semiconductor double quantum dots into the single-electron regime , 2016, 1603.02274.

[13]  L. M. K. Vandersypen,et al.  Efficient controlled-phase gate for single-spin qubits in quantum dots , 2010, 1010.0164.

[14]  L. M. K. Vandersypen,et al.  Quantum simulation of a Fermi–Hubbard model using a semiconductor quantum dot array , 2017, Nature.

[15]  John Preskill,et al.  Sufficient condition on noise correlations for scalable quantum computing , 2012, Quantum Inf. Comput..

[16]  Coherent manipulation of valley states at multiple charge configurations of a silicon quantum dot device , 2017, Nature Communications.

[17]  L. Schreiber,et al.  Simulation of micro-magnet stray-field dynamics for spin qubit manipulation , 2015 .

[18]  Jacob M. Taylor,et al.  Coherent Manipulation of Coupled Electron Spins in Semiconductor Quantum Dots , 2005, Science.

[19]  Daniel Loss,et al.  Phonon-Induced Decay of the Electron Spin in Quantum Dots , 2004 .

[20]  J. P. Dehollain,et al.  Storing quantum information for 30 seconds in a nanoelectronic device. , 2014, Nature nanotechnology.

[21]  Daniel A. Lidar,et al.  Decoherence-Free Subspaces for Quantum Computation , 1998, quant-ph/9807004.

[22]  T. Kobayashi,et al.  Single-Shot Single-Gate rf Spin Readout in Silicon , 2018, Physical Review X.

[23]  K. Itoh,et al.  A quantum-dot spin qubit with coherence limited by charge noise and fidelity higher than 99.9% , 2018, Nature Nanotechnology.

[24]  Micromagnets for coherent control of spin-charge qubit in lateral quantum dots , 2006, cond-mat/0612314.

[25]  A. Einstein Über einen die Erzeugung und Verwandlung des Lichtes betreffenden heuristischen Gesichtspunkt [AdP 17, 132 (1905)] , 2005, Annalen der Physik.

[26]  L. Vandersypen,et al.  Simultaneous spin-charge relaxation in double quantum dots. , 2013, Physical review letters.

[27]  C. Buizert,et al.  Driven coherent oscillations of a single electron spin in a quantum dot , 2006, Nature.

[28]  T. Honda,et al.  Shell Filling and Spin Effects in a Few Electron Quantum Dot. , 1996, Physical review letters.

[29]  P. Szankowski,et al.  The dynamical-decoupling-based spatiotemporal noise spectroscopy , 2018, New Journal of Physics.

[30]  Travis S. Humble,et al.  Quantum supremacy using a programmable superconducting processor , 2019, Nature.

[31]  D. DiVincenzo,et al.  Quantum computation with quantum dots , 1997, cond-mat/9701055.

[32]  R. Ishihara,et al.  Interfacing spin qubits in quantum dots and donors—hot, dense, and coherent , 2017, npj Quantum Information.

[33]  A. Wieck,et al.  Coherent control of individual electron spins in a two dimensional array of quantum dots , 2018, 1808.06180.

[34]  Daniel Nigg,et al.  Experimental quantification of spatial correlations in quantum dynamics , 2018, Quantum.

[35]  J. R. Petta,et al.  A Reconfigurable Gate Architecture for Si/SiGe Quantum Dots , 2015, 1502.01624.

[36]  M. Mariantoni,et al.  Surface codes: Towards practical large-scale quantum computation , 2012, 1208.0928.

[37]  F. Zwanenburg,et al.  Palladium gates for reproducible quantum dots in silicon , 2017, Scientific Reports.

[38]  J. R. Petta,et al.  Scalable gate architecture for a one-dimensional array of semiconductor spin qubits , 2016, 1607.07025.

[39]  R. Joynt,et al.  Do micromagnets expose spin qubits to charge and Johnson noise , 2015, 1511.05247.

[40]  R. S. Ross,et al.  Undoped accumulation-mode Si/SiGe quantum dots , 2014, Nanotechnology.

[41]  D. Kwiatkowski,et al.  Decoherence of two entangled spin qubits coupled to an interacting sparse nuclear spin bath: Application to nitrogen vacancy centers , 2018, Physical Review B.

[42]  R. Feynman Simulating physics with computers , 1999 .

[43]  Hongwen Jiang,et al.  Two-axis quantum control of a fast valley qubit in silicon , 2019, npj Quantum Information.

[44]  Jacob M. Taylor,et al.  Machine learning techniques for state recognition and auto-tuning in quantum dots , 2017, npj Quantum Information.

[45]  L. Vandersypen,et al.  Single-shot read-out of an individual electron spin in a quantum dot , 2004, Nature.

[46]  G. Burkard,et al.  Quadrupolar Exchange-Only Spin Qubit. , 2018, Physical review letters.

[47]  F. Arnaud,et al.  Cryogenic Temperature Characterization of a 28-nm FD-SOI Dedicated Structure for Advanced CMOS and Quantum Technologies Co-Integration , 2018, IEEE Journal of the Electron Devices Society.

[48]  N. Kalhor,et al.  Strong spin-photon coupling in silicon , 2017, Science.

[49]  Yuli V. Nazarov,et al.  Spin relaxation in semiconductor quantum dots , 1999, cond-mat/9907367.

[50]  Timo O. Reiss,et al.  Optimal control of coupled spin dynamics: design of NMR pulse sequences by gradient ascent algorithms. , 2005, Journal of magnetic resonance.

[51]  Vickram N. Premakumar,et al.  Spatial noise correlations in a Si/SiGe two-qubit device from Bell state coherences , 2019, Physical Review B.

[52]  D. E. Savage,et al.  A programmable two-qubit quantum processor in silicon , 2017, Nature.

[53]  J. Verduijn Silicon Quantum Electronics , 2012 .

[54]  A. Gossard,et al.  Quantum coherence in a one-electron semiconductor charge qubit. , 2010, Physical review letters.

[55]  Peter L. McMahon,et al.  Decoherence of up to 8-qubit entangled states in a 16-qubit superconducting quantum processor , 2019, Quantum Science and Technology.

[56]  J. Bird Electron transport in quantum dots , 2003 .

[57]  M. Trippenbach,et al.  Spectroscopy of cross correlations of environmental noises with two qubits , 2015, 1507.03897.

[58]  Jonas Helsen,et al.  A crossbar network for silicon quantum dot qubits , 2017, Science Advances.

[59]  Daniel Loss,et al.  Electron spin evolution induced by interaction with nuclei in a quantum dot , 2003 .

[60]  James R. Chelikowsky,et al.  ELECTRONIC STRUCTURE OF SILICON , 1974 .

[61]  Jacob M. Taylor,et al.  Fault-tolerant architecture for quantum computation using electrically controlled semiconductor spins , 2005 .

[62]  W. G. van der Wiel,et al.  Coherent single electron spin control in a slanting Zeeman field. , 2005, Physical review letters.

[63]  L. Vandersypen,et al.  NMR techniques for quantum control and computation , 2004, quant-ph/0404064.

[64]  J I Colless,et al.  Dispersive readout of a few-electron double quantum dot with fast RF gate sensors. , 2012, Physical review letters.

[65]  R. Mizokuchi,et al.  Physically defined triple quantum dot systems in silicon on insulator , 2019, Applied Physics Letters.

[66]  Saeed Fallahi,et al.  Noise Suppression Using Symmetric Exchange Gates in Spin Qubits. , 2015, Physical review letters.

[67]  P. De Bièvre,et al.  Large-scale production of highly enriched 28Si for the precise determination of the Avogadro constant , 2006 .

[68]  L. Vandersypen,et al.  Spin echo of a single electron spin in a quantum dot. , 2007, Physical review letters.

[69]  Steven J. Clarke,et al.  Rent's rule and extensibility in quantum computing , 2018, Microprocess. Microsystems.

[70]  A. Khaetskii,et al.  Spin-flip transitions between Zeeman sublevels in semiconductor quantum dots , 2000, cond-mat/0003513.

[71]  John Preskill,et al.  Quantum computing and the entanglement frontier , 2012, 1203.5813.

[72]  Andreas D. Wieck,et al.  A machine learning approach for automated fine-tuning of semiconductor spin qubits , 2019, Applied Physics Letters.

[73]  Markus Muller,et al.  Quantifying spatial correlations of general quantum dynamics , 2014, 1409.1770.

[74]  L. M. K. Vandersypen,et al.  Single-Shot Correlations and Two-Qubit Gate of Solid-State Spins , 2011, Science.

[75]  M. Lagally,et al.  Tunable spin loading and T1 of a silicon spin qubit measured by single-shot readout. , 2010, Physical review letters.

[76]  Austin G. Fowler,et al.  Surface code quantum computing by lattice surgery , 2011, 1111.4022.

[77]  Joel R. Wendt,et al.  All-electrical universal control of a double quantum dot qubit in silicon MOS , 2017, 2017 IEEE International Electron Devices Meeting (IEDM).

[78]  M. Veldhorst,et al.  Silicon CMOS architecture for a spin-based quantum computer , 2016, Nature Communications.

[79]  L.M.K. Vandersypen,et al.  Qubit Device Integration Using Advanced Semiconductor Manufacturing Process Technology , 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

[80]  K. B. Whaley,et al.  Universal quantum computation with the exchange interaction , 2000, Nature.

[81]  Hyperfine interaction in a quantum dot: Non-Markovian electron spin dynamics , 2004, cond-mat/0405676.

[82]  D. DiVincenzo,et al.  The Physical Implementation of Quantum Computation , 2000, quant-ph/0002077.

[83]  S. Coppersmith,et al.  A decoherence-free subspace in a charge quadrupole qubit , 2016, Nature Communications.

[84]  J. P. Dehollain,et al.  A 2 × 2 quantum dot array with controllable inter-dot tunnel couplings , 2018, 1802.05446.

[85]  Michael A. Osborne,et al.  Efficiently measuring a quantum device using machine learning , 2018, npj Quantum Information.

[86]  Mark A. Eriksson,et al.  Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet , 2016, Proceedings of the National Academy of Sciences.

[87]  R. Joynt,et al.  Relaxation of excited spin, orbital, and valley qubit states in ideal silicon quantum dots , 2013, 1301.0260.

[88]  M. Lagally,et al.  Single-shot measurement of triplet-singlet relaxation in a Si/SiGe double quantum dot. , 2011, Physical review letters.

[89]  M. N. Makhonin,et al.  Nuclear spin effects in semiconductor quantum dots. , 2013, Nature materials.

[90]  Andrew S. Dzurak,et al.  Fidelity benchmarks for two-qubit gates in silicon , 2018, Nature.

[91]  S. Tarucha,et al.  Current Rectification by Pauli Exclusion in a Weakly Coupled Double Quantum Dot System , 2002, Science.

[92]  J. Baugh,et al.  Network architecture for a topological quantum computer in silicon , 2018, Quantum Science and Technology.

[93]  G. Falci,et al.  1 / f noise: Implications for solid-state quantum information , 2013, 1304.7925.

[94]  Jacob M. Taylor,et al.  A coherent spin–photon interface in silicon , 2017, Nature.

[95]  Hongwen Jiang,et al.  Comparison of low frequency charge noise in identically patterned Si/SiO2 and Si/SiGe quantum dots , 2016 .

[96]  J. P. Dehollain,et al.  A two-qubit logic gate in silicon , 2014, Nature.

[97]  K. Itoh,et al.  Optimized electrical control of a Si/SiGe spin qubit in the presence of an induced frequency shift , 2018, npj Quantum Information.

[98]  A. Houck,et al.  A low-disorder metal-oxide-silicon double quantum dot , 2018, Applied Physics Letters.

[99]  Tammy Pluym,et al.  Coherent coupling between a quantum dot and a donor in silicon , 2015, Nature Communications.

[100]  Tammy Pluym,et al.  Spin-orbit Interactions for Singlet-Triplet Qubits in Silicon. , 2018, Physical review letters.

[101]  S. Das Sarma,et al.  Valley-based noise-resistant quantum computation using Si quantum dots. , 2011, Physical review letters.

[102]  S T Merkel,et al.  Supplemental Materials : Reduced sensitivity to charge noise in semiconductor spin qubits via symmetric operation , 2016 .

[103]  Ritchie,et al.  Measurements of Coulomb blockade with a noninvasive voltage probe. , 1993, Physical review letters.

[104]  D. E. Savage,et al.  Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device , 2018, Physical Review X.

[105]  R. Orbach Spin-lattice relaxation in rare-earth salts , 1961, Proceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences.

[106]  L. M. K. Vandersypen,et al.  Coherent shuttle of electron-spin states , 2017, npj Quantum Information.

[107]  B. O’Sullivan,et al.  Process-Induced Degradation of SiO$_{\bf 2}$ and a-Si:H Passivation Layers for Photovoltaic Applications , 2014, IEEE Journal of Photovoltaics.

[108]  Krysta Marie Svore,et al.  Low-distance Surface Codes under Realistic Quantum Noise , 2014, ArXiv.

[109]  Y. Lyanda-Geller,et al.  Spin relaxation in quantum dots , 2002 .

[110]  R. Schoelkopf,et al.  Superconducting Circuits for Quantum Information: An Outlook , 2013, Science.

[111]  G. Dresselhaus Spin-Orbit Coupling Effects in Zinc Blende Structures , 1955 .

[112]  Ben Reichardt,et al.  Fault-Tolerant Quantum Computation , 2016, Encyclopedia of Algorithms.

[113]  E. Rashba,et al.  Properties of a 2D electron gas with lifted spectral degeneracy , 1984 .

[114]  Coherent long-distance displacement of individual electron spins , 2017, Nature Communications.

[115]  T. Monz,et al.  14-Qubit entanglement: creation and coherence. , 2010, Physical review letters.

[116]  A. C. Gossard,et al.  Fast Sensing of Double-Dot Charge Arrangement and Spin State with a Radio-Frequency Sensor Quantum Dot , 2010, 1001.3585.

[117]  Mark Friesen,et al.  Electrical control of a long-lived spin qubit in a Si/SiGe quantum dot. , 2014, Nature nanotechnology.

[118]  J. Nelson,et al.  Low-frequency charge noise in Si/SiGe quantum dots , 2019, Physical Review B.

[119]  C. Yang,et al.  Dynamically controlled charge sensing of a few-electron silicon quantum dot , 2011, 1107.1557.

[120]  Alexei M. Tyryshkin,et al.  Annealing shallow Si/SiO2 interface traps in electron-beam irradiated high-mobility metal-oxide-silicon transistors , 2016, 1612.08729.

[121]  Gerhard Klimeck,et al.  Spin-valley lifetimes in a silicon quantum dot with tunable valley splitting , 2013, Nature Communications.

[122]  W. V. D. Wiel,et al.  Electron transport through double quantum dots , 2002, cond-mat/0205350.

[123]  J. Levy Universal quantum computation with spin-1/2 pairs and Heisenberg exchange. , 2001, Physical review letters.

[124]  J. M. Boter,et al.  A sparse spin qubit array with integrated control electronics , 2019, 2019 IEEE International Electron Devices Meeting (IEDM).

[125]  J. Krzywda,et al.  Decoherence-assisted detection of entanglement of two qubit states , 2018, Physical Review A.

[126]  K. Shrivastava Theory of Spin–Lattice Relaxation , 1983 .

[127]  J. Petta,et al.  Shuttling a single charge across a one-dimensional array of silicon quantum dots , 2018, Nature Communications.

[128]  A. Wallraff,et al.  Coherent spin–photon coupling using a resonant exchange qubit , 2018, Nature.

[129]  L. Vandersypen,et al.  Tunable Coupling and Isolation of Single Electrons in Silicon Metal-Oxide-Semiconductor Quantum Dots , 2019, Nano letters.

[130]  J. R. Petta,et al.  Circuit quantum electrodynamics architecture for gate-defined quantum dots in silicon , 2016, 1610.05571.

[131]  Edoardo Charbon,et al.  The Cryogenic Temperature Behavior of Bipolar, MOS, and DTMOS Transistors in Standard CMOS , 2018, IEEE Journal of the Electron Devices Society.

[132]  S. Tarucha,et al.  Electrically driven single-electron spin resonance in a slanting Zeeman field , 2008, 0805.1083.

[133]  Albert Einstein,et al.  Can Quantum-Mechanical Description of Physical Reality Be Considered Complete? , 1935 .

[134]  Xuedong Hu,et al.  Exchange in silicon-based quantum computer architecture. , 2002, Physical review letters.

[135]  Charles Tahan,et al.  Charge-noise-insensitive gate operations for always-on, exchange-only qubits , 2016, 1602.00320.

[136]  M Xiao,et al.  Measurement of the spin relaxation time of single electrons in a silicon metal-oxide-semiconductor-based quantum dot. , 2010, Physical review letters.

[137]  R Maurand,et al.  A CMOS silicon spin qubit , 2016, Nature Communications.

[138]  Maud Vinet,et al.  Gate-based high fidelity spin readout in a CMOS device , 2018, Nature Nanotechnology.

[139]  Gerhard Klimeck,et al.  Electrically controlling single-spin qubits in a continuous microwave field , 2015, Science Advances.

[140]  L. Vandersypen,et al.  Single-spin CCD. , 2015, Nature nanotechnology.

[141]  L. Vandersypen,et al.  Supporting Online Material for Coherent Control of a Single Electron Spin with Electric Fields Materials and Methods Som Text Figs. S1 and S2 References , 2022 .

[142]  A. Khaetskii,et al.  Electron spin decoherence in quantum dots due to interaction with nuclei. , 2002, Physical review letters.

[143]  D. J. Twitchen,et al.  A Ten-Qubit Solid-State Spin Register with Quantum Memory up to One Minute , 2019, Physical Review X.

[144]  G. Pozzi,et al.  An Experiment on Electron Interference , 1973 .

[145]  N. Kalhor,et al.  Rapid gate-based spin read-out in silicon using an on-chip resonator , 2019, Nature Nanotechnology.

[146]  L. Vandersypen,et al.  Spins in few-electron quantum dots , 2006, cond-mat/0610433.

[147]  Jin Kawakita,et al.  Reaction factors for photo-electrochemical deposition of metal silver on polypyrrole as conducting polymer , 2015 .

[148]  A. Wieck,et al.  A few-electron quadruple quantum dot in a closed loop , 2012, 1209.0733.