Cathodoluminescence evidence of the relative position of As(g) and Ga(g) dislocation-related energy bands in gallium arsenide

Cathodoluminescence contrast experiments are performed in the range 87 to 350 K on As(g) and Ga(g) dislocations introduced by means of microhardness indentations in p-type bulk gallium arsenide. The experimental results are interpreted by a model which assumes the recombination properties of the dislocation to be the results of the dislocation radial electrical field. It is found, in agreement with previous EBIC contrast studies of dislocations in n-type GaAs, that the energy band related to the As(g) dislocation is closer to the top of the valence band than that related to the Ga(g) dislocation. Nous avons mesure le contraste de cathodoluminescence de dislocations de type As(g) et Ga(g) introduites par micro-indentations dans GaAs massif type p. Les resultats, obtenus entre 87 et 350 K, sont interpretes a l'aide d'un modele dans lequel on suppose que la recombinaison a la dislocation est due a la presence de son champ electrique. Nous montrons que les bandes d'energie associees aux dislocations As(g) sont plus proches du haut de la bande de valence que celles associees aux dislocations Ga(g). Cesi est en accord avec ce que nous avions precedemment suggere a partir d'experiences de contraste EBIC realisees dans GaAs type n.

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