High-Speed Quantum-Dot Vertical-Cavity Surface-Emitting Lasers
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[1] D.G. Deppe,et al. Low-threshold continuous-wave operation of an oxide-confined vertical-cavity surface-emitting laser based on a quantum dot active region and half-wave cavity , 1997, 1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application.
[2] Friedhelm Hopfer,et al. Vertical-cavity surface-emitting quantum-dot laser with low threshold current grown by metal-organic vapor phase epitaxy , 2006 .
[3] Ben J. Stevens,et al. p-doped 1.3 μm InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency , 2006 .
[4] P. Bhattacharya,et al. Properties of a tunneling injection quantum-well laser: Recipe for 'cold' device with a large modulation bandwidth , 1993, IEEE Photonics Technology Letters.
[5] Friedhelm Hopfer,et al. Micro-Raman studies of vertical-cavity surface-emitting lasers with AlxOy/GaAs distributed Bragg reflectors , 2002 .
[6] S. Fathpour,et al. Small-signal modulation characteristics of p-doped 1.1- and 1.3-/spl mu/m quantum-dot lasers , 2005, IEEE Photonics Technology Letters.
[7] Roger King,et al. Applications of VCSELs for optical interconnects , 1998, 24th European Conference on Optical Communication. ECOC '98 (IEEE Cat. No.98TH8398).
[8] Nikolai N. Ledentsov,et al. Wavelength-stabilized tilted cavity quantum dot laser , 2004 .
[9] Mikhail V. Maximov,et al. High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers , 2005 .
[10] Dieter Bimberg,et al. Control of the electronic properties of CdSe submonolayer superlattices via vertical correlation of quantum dots , 1999 .
[11] J. Yang,et al. Growth and characteristics of ultralow threshold 1.45 μm metamorphic InAs tunnel injection quantum dot lasers on GaAs , 2006 .
[12] L. Coldren,et al. Diode Lasers and Photonic Integrated Circuits , 1995 .
[13] P. Chiniwalla,et al. Chip-to-chip optical interconnects , 2006, 2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference.
[14] Mikhail V. Maximov,et al. Low threshold, large To injection laser emission from (InGa)As quantum dots , 1994 .
[15] Sasan Fathpour,et al. High-speed quantum dot lasers , 2005 .
[16] L. Schares,et al. 160-Gb/s Bidirectional Parallel Optical Transceiver Module for Board-Level Interconnects Using a Single-Chip CMOS IC , 2007, 2007 Proceedings 57th Electronic Components and Technology Conference.
[17] Weinberg,et al. Initial stages of InAs epitaxy on vicinal GaAs(001)-(2 x 4). , 1994, Physical review. B, Condensed matter.
[18] Egorov,et al. Structural characterization of (In,Ga)As quantum dots in a GaAs matrix. , 1995, Physical review. B, Condensed matter.
[19] Mikhail V. Maximov,et al. 0.94 µm diode lasers based on Stranski-Krastanow and sub-monolayer quantum dots , 2000 .
[20] A. P. Vasil’ev,et al. High performance quantum dot lasers on GaAs substrates operating in 1.5 /spl mu/m range , 2003 .
[21] Magnus Willander,et al. Multiple wavelength electroluminescence and laser generation in p-i-n resonant tunneling heterostructures , 1998 .
[22] Peter Michael Smowton,et al. Temperature dependence of threshold current in p-doped quantum dot lasers , 2006 .
[23] Y. Kwark,et al. 15.6 Gb/s transmission over 1 km of next generation multimode fiber , 2001, Proceedings 27th European Conference on Optical Communication (Cat. No.01TH8551).
[24] Nikolai N. Ledentsov,et al. Quantum dot heterostructures , 1999 .
[25] H. Ishikawa,et al. Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection , 1995, IEEE Photonics Technology Letters.
[26] Matthias Kuntz,et al. QD lasers: physics and applications , 2005, SPIE/OSA/IEEE Asia Communications and Photonics.
[27] Peter Michael Smowton,et al. Experimental investigation of the effect of wetting-layer states on the gain–current characteristic of quantum-dot lasers , 2002 .
[28] Nikolai N. Ledentsov,et al. Arrays of Two-Dimensional Islands Formed by Submonolayer Insertions: Growth, Properties, Devices , 2001 .
[29] S.C. Wang,et al. Single-mode monolithic quantum-dot VCSEL in 1.3 /spl mu/m with sidemode suppression ratio over 30 dB , 2006, IEEE Photonics Technology Letters.
[30] D. Bimberg,et al. 20 Gb/s 85$^{\circ}$C Error-Free Operation of VCSELs Based on Submonolayer Deposition of Quantum Dots , 2006, IEEE Journal of Selected Topics in Quantum Electronics.
[31] C. Caneau,et al. Cavity length and doping dependence of 1.5- mu m GaInAs/GaInAsP multiple quantum well laser characteristics , 1990, IEEE Photonics Technology Letters.
[32] Friedhelm Hopfer,et al. Single-mode submonolayer quantum-dot vertical-cavity surface-emitting lasers with high modulation bandwidth , 2006 .
[33] D. Bimberg,et al. Electronic and optical properties of strained quantum dots modeled by 8-band k⋅p theory , 1999 .
[34] Dieter Bimberg,et al. Enhanced radiation hardness of quantum dot lasers to high energy proton irradiation , 2001 .
[35] R. Stephenson. A and V , 1962, The British journal of ophthalmology.
[36] Nikolai N. Ledentsov,et al. Ordered arrays of quantum dots: Formation, electronic spectra, relaxation phenomena, lasing , 1996 .
[37] Dieter Bimberg,et al. Many-body effects on the optical spectra of InAs/GaAs quantum dots , 2000 .
[38] H. Hatakeyama,et al. 25-Gbps operation of 1.1-/spl mu/m-range InGaAs VCSELs for high-speed optical interconnections , 2006, 2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference.
[39] N. Grote,et al. Ultra-High-Bandwidth (>35 GHz) Electrooptically-Modulated VCSEL , 2006, 2006 Optical Fiber Communication Conference and the National Fiber Optic Engineers Conference.
[40] Nikolai N. Ledentsov,et al. High-power singlemode CW operation of 1.5 /spl mu/m-range quantum dot GaAs-based laser , 2005 .
[41] A. Paraskevopoulos. High-Bandwidth VCSEL Devices , 2006, LEOS 2006 - 19th Annual Meeting of the IEEE Lasers and Electro-Optics Society.
[42] Mikhail V. Maximov,et al. Degradation-robust single mode continuous wave operation of 1.46μm metamorphic quantum dot lasers on GaAs substrate , 2006 .
[43] Mikhail V. Maximov,et al. InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm , 2000 .
[44] C. Chang-Hasnain,et al. Modulation of a vertical-cavity surface-emitting laser using an intracavity quantum-well absorber , 1998, IEEE Photonics Technology Letters.
[45] Jasprit Singh,et al. Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers , 2003 .
[46] Richard Schatz,et al. Quest for very high speed VCSELs: pitfalls and clues , 2001, SPIE OPTO.
[47] Friedhelm Hopfer,et al. Quantum dot based photonic devices at 1.3 µm: Direct modulation, mode-locking, SOAs and VCSELs , 2006 .
[48] A. N. Al-Omari,et al. Low thermal resistance high-speed top-emitting 980-nm VCSELs , 2006, IEEE Photonics Technology Letters.
[49] Diana L. Huffaker,et al. Low threshold half-wave vertical-cavity lasers , 1994 .
[50] G. Eisenstein,et al. The impact of energy band diagram and inhomogeneous broadening on the optical differential gain in nanostructure lasers , 2005, IEEE Journal of Quantum Electronics.
[51] P ? ? ? ? ? ? ? % ? ? ? ? , 1991 .
[52] Serge Luryi,et al. Tunneling-injection quantum-dot laser: ultrahigh temperature stability , 2001 .
[53] Nikolai N. Ledentsov,et al. 3.9 W CW power from sub-monolayer quantum dot diode laser , 1999 .
[54] Igor L. Krestnikov,et al. Reliability study of InAs/InGaAs quantum dot diode lasers , 2005 .
[55] D. Bimberg,et al. Comments on "Lasing at three-dimensionally quantum-confined sublevel of self-organized In/sub 0.5/Ga/sub 0.5/As quantum dots by current injection" [and reply] , 1996 .
[56] Daniel M. Kuchta,et al. 15.6-Gb/s transmission over 1 km of next generation multimode fiber , 2002 .
[57] James A. Lott,et al. Vertical cavity lasers based on vertically coupled quantum dots , 1997 .
[58] Nikolai N. Ledentsov,et al. Direct modulation and mode locking of 1.3 μm quantum dot lasers , 2004 .
[59] L. Schares,et al. Data Center and High Performance Computing Interconnects for 100 Gb/s and Beyond , 2007, OFC/NFOEC 2007 - 2007 Conference on Optical Fiber Communication and the National Fiber Optic Engineers Conference.
[60] Y. Wang,et al. High-frequency modulation characteristics of 1.3-/spl mu/m InGaAs quantum dot lasers , 2004, IEEE Photonics Technology Letters.
[61] John E. Bowers,et al. Comments on "Lasing at Three-Dimensionally Quantum-Confined Sublevel of Self-organized Ino,SGao.SAs Quantum Dots by Current Injection" , 1996 .
[62] A. R. Kovsh,et al. Novel concepts for ultrahigh-speed quantum-dot VCSELs and edge-emitters , 2007, SPIE OPTO.
[63] Nikolai N. Ledentsov,et al. Epitaxy of Nanostructures , 2003 .
[64] Joo-Heon Ahn,et al. High temperature performance of self-organised quantum dot laser with stacked p-doped active region , 2002 .