Diamond MEMS — a new emerging technology

Abstract Diamond is a superhard, wide bandgap, semiconductor material of high mechanical strength and thermal stability and therefore an ideal candidate for micro electromechanical devices. Using these properties in a diamond-on-Si technology, a number of sensors and actuators have been attempted. However, their industrial implementation lags far behind that of silicon microelectromechanical systems (Si-MEMS) technologies. In this study, highly oriented chemical vapor deposition (CVD) diamond films were deposited on large area Si-substrates, micromachined into structured membranes and applied to two demonstrators: a seismic mass membrane acceleration sensor and a liquid ejector based on a diamond microspot heater. In this technology, the outstanding and extreme diamond material properties are already widely reflected in the performance of the demonstrators. The technology may be scaled and implemented into existing Si-based microsystem technologies and may therefore open up the possibility to integrate diamond MEMS technology into the Si-based mainstream.

[1]  R. Jackman,et al.  Enhancement mode metal-semiconductor field effect transistors from thin-film polycrystalline diamond , 1998, IEEE Electron Device Letters.

[2]  Material and design considerations for low-power microheater modules for gas-sensor applications , 1995 .

[3]  P. Koidl,et al.  Chemical vapour deposition and characterization of smooth {100}-faceted diamond films , 1993 .

[4]  J. E. Field,et al.  Strength, fracture and friction properties of diamond , 1996 .

[5]  M. Mehregany,et al.  Internal stress and elastic modulus measurements on micromachined 3C-SiC thin films , 1997 .

[6]  H. Kotera,et al.  Piezoresistive property of CVD diamond films , 1997 .

[7]  T. Imai,et al.  The measurement of thermal properties of diamond , 1997 .

[8]  T. Potter,et al.  Piezoresistivity in vapor-deposited diamond films , 1992 .

[9]  J. M. Meese,et al.  Effect of mechanical stress on current-voltage characteristics of thin film polycrystalline diamond Schottky diodes , 1993 .

[10]  E. Kohn,et al.  Actuator – sensor technology on “electronic grade” diamond films , 1998 .

[11]  S. Yugo,et al.  New method for selective growth of diamonds by microwave plasma chemical vapour deposition , 1993 .

[12]  R. Ramesham,et al.  Synthetic Diamond Micromechanical Membranes, Cantilever Beams, and Bridges , 1990 .

[13]  S. Dub,et al.  Hardness and fracture toughness of CVD diamond film , 1996 .

[14]  Weng Poo Kang,et al.  Polycrystalline diamond pressure sensor , 1995 .

[15]  D. Aslam,et al.  Single-structure heater and temperature sensor using a p-type polycrystalline diamond resistor , 1996, IEEE Electron Device Letters.

[16]  E. Obermeier,et al.  Piezoresistive effect of boron-doped diamond thin films , 1993 .

[17]  Andrei Vescan,et al.  Electrical characterisation of diamond resistors etched by RIE , 1996 .

[18]  E. Kohn,et al.  Bias-enhanced nucleation of diamond on silicon dioxide , 1997 .

[19]  A. Vescan,et al.  The nucleation of highly oriented diamond on silicon via an alternating current substrate bias , 1996 .

[20]  P. Koidl,et al.  Heteroepitaxial growth of highly oriented diamond on cubic silicon carbide , 1997 .

[21]  H. Reiss,et al.  Thermal resistance and electrical insulation of thin low-temperature-deposited diamond films , 1997 .

[22]  Egbert Oesterschulze,et al.  Fabrication of integrated diamond cantilevers with tips for SPM applications , 1997 .

[23]  P. Chalker,et al.  High temperature Young's modulus of polycrystalline diamond , 1997 .

[24]  Kenneth E. Goodson,et al.  Impact of nucleation density on thermal resistance near diamond-substrate boundaries , 1997 .

[25]  T. Muto,et al.  Generation of diamond nuclei by electric field in plasma chemical vapor deposition , 1991 .

[26]  R. Roy,et al.  Survival of diamond at 2200 °C in hydrogen , 1996 .

[27]  R. Locher,et al.  The diamond Irvin curve , 1997 .

[28]  Reinhard Zachai,et al.  The nucleation and growth of large area, highly oriented diamond films on silicon substrates , 1998 .

[29]  W. L. Wang,et al.  Piezoresistivity of polycrystalline p-type diamond films of various doping levels at different temperatures , 1997 .

[30]  A. Masood,et al.  Boron-doped vapor-deposited diamond temperature microsensors , 1994 .