论文信息 - High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz - 字舞流文

High performance 0.25 μm gate-length AlGaN/GaN HEMTs on sapphire with power density of over 4.5 W/mm at 20 GHz

G. Simin | M. Khan | I. Adesida | A. Kuliev | V. Kumar | R. Schwindt | J. Yang | Vipan Kumar | M. Muir