An empirical model for device degradation due to hot-carrier injection

An empirical model for device degradation due to hot-carrier injection in submicron n-channel MOSFET's is presented. Relationships between device degradation, drain voltage, and substrate current are clarified on the basis of experiments and modeling. The presented model makes it possible to predict the lifetime of submicron devices by determining a certain criterion, such as taking a Vthshift of 10 mV over ten years as being allowable. This could also provide quantitative guiding principles for devising "hot-carrier resistant" device structures.

[1]  E. Takeda,et al.  Comparison of characteristics of n-channel and p-channel MOSFET's for VLSI's , 1983, IEEE Transactions on Electron Devices.

[2]  Y. Nakagome,et al.  An As-P(n+-n-)double diffused drain MOSFET for VLSI's , 1983, IEEE Transactions on Electron Devices.

[3]  G. Dorda,et al.  Generation of interface states by hot hole injection in MOSFET's , 1982, IEEE Transactions on Electron Devices.

[4]  Shojiro Asai,et al.  New Observation of Hot-Carrier Injection Phenomena , 1983 .

[5]  B. Eitan,et al.  Hot-electron injection into the oxide in n-channel MOS devices , 1981, IEEE Transactions on Electron Devices.

[6]  R. C. Sun,et al.  Threshold-voltage instability in MOSFET's due to channel hot-hole emission , 1981, IEEE Transactions on Electron Devices.

[7]  R.H. Dennard,et al.  1 /spl mu/m MOSFET VLSI technology. IV. Hot-electron design constraints , 1979, IEEE Journal of Solid-State Circuits.

[8]  P.E. Cottrell,et al.  Hot-electron emission in N-channel IGFET's , 1979, IEEE Transactions on Electron Devices.

[9]  C. Hu.  Lucky-electron model of channel hot electron emission , 1979, 1979 International Electron Devices Meeting.

[10]  T. H. Ning,et al.  Hot-electron emission from silicon into silicon dioxide , 1978 .