Nonlocal and nonlinear transport in semiconductors: Real-space transfer effects

The contributions of nonlocal mechanisms to nonlinear transport in semiconductors, with special emphasis on hot‐electron emission at heterojunctions and its variations which are now commonly termed real‐space transfer effects, are reviewed. The goal is to equitably account for and bring together the body of literature that has developed, often independently, in the U.S. and the former Soviet Union as well as in Europe and Japan.

[1]  M. Shur,et al.  New negative resistance regime of heterostructure insulated gate transistor (HIGFET) operation , 1986, IEEE Electron Device Letters.

[2]  Michael A. Littlejohn,et al.  Velocity‐field characteristics of GaAs with Γc6‐Lc6‐Xc6 conduction‐band ordering , 1977 .

[3]  S. Luryi,et al.  HOT-ELECTRON TRANSPORT IN HETEROSTRUCTURE DEVICES , 1985 .

[4]  K. Hess,et al.  Fast switching and storage in GaAs—AlxGa1-xAs heterojunction layers , 1982, IEEE Electron Device Letters.

[5]  S. Luryi,et al.  Hot‐electron memory effect in double‐layered heterostructures , 1984 .

[6]  AlGaAs/GaAs charge injection transistor/negative resistance field‐effect transistor fabricated with shallow Pd/Ge ohmic contacts , 1994 .

[7]  W. Kopp,et al.  The DC, AC, and noise properties of the GaAs/AlGaAs modulation-doped field-effect transistor channel , 1986, IEEE Transactions on Electron Devices.

[8]  Multi-terminal light emitting logic device electrically reprogrammable between OR and NAND functions , 1992 .

[9]  R. Magno,et al.  Negative differential resistance at 300 K in a superlattice quantum state transfer device , 1984 .

[10]  Nonlinear optical properties of the electron‐hole plasma in Al0.52Ga0.48As , 1987 .

[11]  K. W. Kim,et al.  Novel charge injection transistors with heterojunction source (launcher) and drain (blocker) configurations , 1993 .

[12]  J. Leburton,et al.  Tunneling real‐space transfer induced by wave function hybridization in modulation‐doped heterostructures , 1990 .

[13]  C. Hilsum,et al.  Transferred electron amplifiers and oscillators , 1962, IRE Transactions on Electron Devices.

[14]  Y. Zohta.  Influence of transmission resonance on carrier collection in a semiconductor quantum well , 1986 .

[15]  Schöll,et al.  Oscillatory bistability of real-space transfer in semiconductor heterostructures. , 1992, Physical review. B, Condensed matter.

[16]  M. Suzuki,et al.  Photo-luminescence studies of hot electrons and real space transfer effect in a double quantum well superlattice , 1986 .

[18]  M. Suzuki,et al.  Real space transfer of two dimensional electrons in double quantum well structures , 1988 .

[19]  Quantum well electro-absorption in a strong electric field: a continuum spectrum approach , 1987 .

[20]  R. E. Nahory,et al.  Optical properties and band structure of short-period GaAs/AlAs superlattices , 1987 .

[21]  Ikonic,et al.  Effective-mass-mismatch-induced intersubband absorption line broadening in semiconductor quantum wells. , 1988, Physical Review B (Condensed Matter).

[22]  S. Luryi,et al.  Charge injection logic , 1990 .

[23]  S. Luryi,et al.  Collector‐up light‐emitting charge injection transistors in n‐InGaAs/InAlAs/p‐InGaAs and n‐InGaAs/InP/p‐InGaAs heterostructures , 1993 .

[24]  B. Ridley,et al.  Effective-mass eigenfunctions in superlattices and their role in well-capture , 1986 .

[25]  Real‐space transfer in three‐terminal InGaAs/InAlAs/InGaAs heterostructure devices , 1990 .

[26]  Dimitris Pavlidis,et al.  In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (0.53, 1991 .

[27]  J. Harbison,et al.  DC and AC characteristics of delta-doped GaAs FET , 1989, IEEE Electron Device Letters.

[28]  Escape from quantum wells via polar optical phonon scattering , 1990 .

[29]  L. M. Miller,et al.  Strained layer InGaAs channel negative-resistance field-effect transistor , 1989 .

[30]  K. Maezawa,et al.  Monte Carlo Study of Charge Injection Transistors (CHINTs) , 1993 .

[31]  Rui Q. Yang,et al.  Energy‐dependent electron wave coupling between two asymmetric quantum well waveguides , 1991 .

[32]  E. Conwell.  High field transport in semiconductors , 1967 .

[33]  M. Inoue,et al.  Real-space transfer and hot-electron transport properties in III-V semiconductor heterostructures , 1989 .

[34]  S. Luryi,et al.  Light-emitting transistor based on real-space transfer: electrical and optical properties , 1993 .

[35]  C. Foxon,et al.  Γ-X transfer rates in type II (Al)GaAs / AlAs superlattices , 1989 .

[36]  Symmetry of the real-space transfer and collector-controlled states in charge injection transistors , 1992 .

[37]  M. Hueschen,et al.  Improved microwave performance in transistors based on real space electron transfer , 1990 .

[38]  Xu,et al.  Analysis of guided electron waves in coupled quantum wells. , 1991, Physical review. B, Condensed matter.

[39]  S. Luryi,et al.  Evidence for a real‐space transfer of hot holes in strained GeSi/Si heterostructures , 1990 .

[40]  S. Luryi,et al.  Light emitting charge injection transistor with p‐type collector , 1992 .

[41]  E. Gornik,et al.  Tunneling and energy relaxation of hot electrons in double quantum well structures , 1989 .

[42]  M. Moško,et al.  Energy exchange between heterostructure layers by real‐space electron transfer , 1989 .

[43]  T. H. Glisson,et al.  Monte Carlo simulation of real‐space electron transfer in GaAs‐AlGaAs heterostructures , 1980 .

[44]  K. Hess,et al.  Real-space electron transfer by thermionic emission in GaAsAlxGa1−xAs heterostructures: Analytical model for large layer widths , 1980 .

[45]  M. Patil,et al.  Monte Carlo simulation of real-space transfer transistors: device physics and scaling effects , 1993 .

[46]  Dawson,et al.  Subpicosecond real-space charge transfer in type-II GaAs/AlAs superlattices. , 1989, Physical review letters.

[47]  S. Luryi,et al.  Theory of hot-electron injection in CHINT/NERFET devices , 1987, IEEE Transactions on Electron Devices.

[48]  Pavol Quittner,et al.  On the analytical approach to the real space electron transfer in GaAsAlGaAs heterostructures , 1988 .

[49]  S. Banerjee,et al.  Measurements of hot-electron conduction and real-space transfer in GaAs-AlxGa1-xAs heterojunction layers , 1981 .

[50]  T. H. Ning,et al.  Hot-electron emission from silicon into silicon dioxide , 1978 .

[51]  W. Masselink,et al.  Electron velocity in GaAs: bulk and selectively doped heterostructures , 1980 .

[52]  J. Laskar,et al.  Gate-controlled negative differential resistance in drain current characteristics of AlGaAs/InGaAs/GaAs pseudomorphic MODFETs , 1989, IEEE Electron Device Letters.

[53]  R. Fischer,et al.  Γ to X transport of photoexcited electrons in type II GaAs/AlAs multiple quantum well structures , 1989 .

[54]  T. B. Watkins,et al.  The Possibility of Negative Resistance Effects in Semiconductors , 1961 .

[55]  K. Cheng,et al.  Observation of light emission from real‐space transfer devices , 1992 .

[56]  S. Luryi,et al.  Novel real-space hot-electron transfer devices , 1983, IEEE Electron Device Letters.

[57]  John R. Barker,et al.  Physics of nonlinear transport in semiconductors , 1980 .

[58]  S. Luryi.  Charge injection transistors and logic circuits , 1990 .

[59]  F. E. Najjar,et al.  Observation of high-frequency high-field instability in GaAs/InGaAs/AlGaAs DH-MODFETs at K band , 1988, IEEE Electron Device Letters.

[60]  K. H. Ploog,et al.  Proposal of novel electron wave coupled devices , 1990 .

[61]  W. Masselink,et al.  Electron velocity and negative differential mobility in AlGaAs/GaAs modulation‐doped heterostructures , 1987 .

[62]  J. Leburton,et al.  Observation of tunnelling real-space transfer in pseudomorphic MODFETS at T=300 K , 1991 .

[63]  W. K. Chan,et al.  High‐frequency amplification and generation in charge injection devices , 1986 .

[64]  Jesus A. del Alamo,et al.  Quantum field-effect directional coupler , 1990 .

[65]  W. Kopp,et al.  Noise temperature and diffusion coefficient associated with the quasi-two-dimensional electron gas in an ungated MODFET structure , 1986, IEEE Electron Device Letters.

[66]  A. Gopinath,et al.  Reduction of real‐space transfer in depletion‐mode dipole heterostructure field‐effect transistors , 1991 .

[67]  Serge Luryi,et al.  Light‐emitting devices based on the real‐space transfer of hot electrons , 1991 .

[68]  K. Brennan,et al.  Theoretical comparison of electron real‐space transfer in classical and quantum two‐dimensional heterostructure systems , 1989 .

[69]  W. Porod,et al.  Real‐space transfer from quantum wells by polar optical phonon scattering , 1989 .

[70]  T. V. D. Roer,et al.  Reduced intervalley transfer in a GaAsAlGaAs heterojunction , 1988 .

[71]  Dawson,et al.  Short-period GaAs-AlAs superlattices: Optical properties and electronic structure. , 1988, Physical review. B, Condensed matter.

[72]  Wei Wang,et al.  ELECTRON VELOCITY AT HIGH ELECTRIC FIELDS IN AlGaAs/GaAs MODULATION-DOPED HETEROSTRUCTURES , 1988 .

[73]  Karl Hess,et al.  Negative differential resistance through real‐space electron transfer , 1979 .

[74]  M. Patil,et al.  Monte Carlo analysis of real‐space transfer in a three‐terminal device , 1992 .

[75]  H. Morkoç,et al.  Demonstration of a new oscillator based on real‐space transfer in heterojunctions , 1982 .

[76]  Klaus Koehler,et al.  Electron and hole tunneling transfer times in GaAs/Al0.35Ga0.65As asymmetric double quantum wells under electric field , 1990, Other Conferences.

[77]  M. Inoue,et al.  Real space hot electron distributions and transfer effects in heterostructures , 1988 .

[78]  M. Mouis,et al.  Real-Space Transfer in Heterojunction FET's : Monte-Carlo Simulation and Analytical Model , 1988, ESSDERC '88: 18th European Solid State Device Research Conference.

[79]  J. Alamo,et al.  Strained-insulator In/sub x/Al/sub 1-x/As/n/sup +/-In/sub 0.53/Ga/sub 0.47/As heterostructure field-effect transistors , 1991 .

[80]  S. Luryi,et al.  High transconductance and large peak‐to‐valley ratio of negative differential conductance in three‐terminal InGaAs/InAlAs real‐space transfer devices , 1990 .

[81]  E. Schöll,et al.  Complex dynamical behavior and chaos in the hess oscillator , 1989 .

[82]  K. Seeger,et al.  Semiconductor Physics: An Introduction , 1973 .

[83]  S. Luryi,et al.  Quench of hot-electron real space transfer by electronic screening , 1991 .

[84]  J. Nagle,et al.  Carrier dynamics in (GaAs) m (AlAs) n superlattices , 1989 .

[85]  J. Pond,et al.  Microwave amplification to 2.5 GHz in a quantum state transfer device , 1985 .

[86]  H. Sakaki,et al.  Field‐dependent transport of electrons in selectively doped AlGaAs/GaAs/AlGaAs double‐heterojunction systems , 1985 .

[87]  H. A. Lorentz.  Problems of modern physics , 1927 .

[88]  V. Milanovic,et al.  Energy Band Calculation and Zero Energy Gap Conditions for Semiconductor Superlattices , 1982 .

[89]  M. Moško,et al.  Picosecond real‐space electron transfer in GaAs–n‐AlxGa1−xAs heterostructures with graded barriers: Monte Carlo simulation , 1990 .

[90]  J. Leburton,et al.  Experimental and theoretical investigation of the DC and high-frequency characteristics of the negative differential resistance in pseudomorphic AlGaAs/InGaAs/GaAs MODFET's , 1992 .

[91]  K. Hess,et al.  Ensemble Monte Carlo simulation of real space transfer (NERFET/CHINT) devices , 1988 .

[92]  P. Sakalas,et al.  Comparative analysis of microwave noise in GaAs and AlGaAs/GaAs channels , 1993 .

[93]  E. Schöll,et al.  Novel mechanism of a real‐space transfer oscillator , 1991 .

[94]  Brum,et al.  Resonant carrier capture by semiconductor quantum wells. , 1986, Physical review. B, Condensed matter.

[95]  K. Reimann,et al.  Fast, alloy-disorder-induced intervalley scattering in AlxGa1-xAs , 1989 .

[96]  Negative-resistance field-effect transistor grown by organometallic chemical vapor deposition , 1986 .

[97]  S. Luryi,et al.  Hot electron injection devices , 1985 .

[98]  J. B. Boos,et al.  Observation of DC and microwave negative differential resistance in InAlAs/InGaAs/InP HEMTs , 1992 .

[99]  K. Hess,et al.  Physics of real‐space transfer transistors , 1989 .

[100]  R. Dingle,et al.  Electron mobilities in modulation‐doped semiconductor heterojunction superlattices , 1978 .

[101]  H. Morkoç,et al.  Velocity fluctuation noise measurements on AlGaAs—GaAs interfaces , 1987, IEEE Transactions on Electron Devices.

[102]  Xiaoyuan Jiang,et al.  Observation of real space transfer in GaAs-AlGaAs heterostructure grown by LPE , 1987 .

[103]  K. W. Kim,et al.  Novel heterojunction real-space transfer logic transistor structures: a model-based investigation , 1992 .

[104]  P. Solomon,et al.  A GaAs gate heterojunction FET , 1984, IEEE Electron Device Letters.

[105]  Giorgio Margaritondo,et al.  Heterojunction Band Discontinuities: Physics and Device Applications , 1987 .

[106]  Pinto,et al.  Broken symmetry and the formation of hot-electron domains in real-space-transfer transistors. , 1991, Physical review letters.

[107]  Real space transfer rates for polar optical phonon scattering from asymmetric quantum wells , 1989 .

[108]  West,et al.  Resistance resonance in coupled potential wells. , 1990, Physical review letters.