Analysis of leakage current in buried heterostructure lasers with semiinsulating blocking layers

An effective device structure for reducing leakage current in buried heterostructure laser diodes with semi-insulating InP blocking layers is analyzed. The analysis utilizes a semiconductor device simulator in which deep trap levels are taken into account. It predicts that the addition of a thin wide-bandgap InGaP layer in the semi-insulating region at the mesa boundaries as a barrier to prevent double injection into the semi-insulating region is effective in reducing leakage current. >

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