论文信息 - Lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (x = 0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beam epitaxy - 字舞流文

Lattice-matched InxGa1-xAs/InxAl1-xAs quantum wells (x = 0.18 and 0.19) grown on (411)A- and (100)-oriented InGaAs ternary substrates by molecular beam epitaxy

S. Hiyamizu | S. Shimomura | K. Nakajima | T. Kitada | Y. Kitano | Hidehiko Kuge

[1] S. Hiyamizu,et al. In0.05Ga0.95As/Al0.3Ga0.7As quantum wells grown on a (411)A-oriented In0.06Ga0.94As ternary substrate by molecular beam epitaxy , 2000 .

[2] S. Hiyamizu,et al. Super-flat interfaces in pseudomorphic In0.72Ga0.28As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy , 2000 .

[3] H. Ishikawa,et al. InGaAs single crystal using a GaAs seed grown with the vertical gradient freeze technique , 1999 .

[4] S. Hiyamizu,et al. Super-flat interfaces in In0.53Ga0.47As/In0.52Al0.48As quantum wells grown on (411)A InP substrates by molecular beam epitaxy , 1998 .

[5] H. Ishikawa,et al. Long-wavelength strained quantum-well lasers oscillating up to 210/spl deg/C on InGaAs ternary substrates , 1998, IEEE Photonics Technology Letters.

[6] H. Ishikawa,et al. High T0 (140 K) and low-threshold long-wavelength strained quantum well lasers on InGaAs ternary substrates , 1997 .

[7] N. Andrew,et al. Absolute Lattice-Parameter Measurement , 1995 .

[8] S. Hiyamizu,et al. Characterization of GaAs/AlAs interfacial atomic step structures on a (411)A-oriented substrate by transmission electron microscope , 1995 .

[9] S. Hiyamizu,et al. Extremely high uniformity of interfaces in GaAs/AlGaAs quantum wells grown on (411)A GaAs substrates by molecular beam epitaxy , 1994 .