Simulation study of irradiated Si sensors equipped with metal-overhang for applications in LHC environment

The performance of metal-overhang (MO) equipped silicon micro-strip sensors, after irradiation for the preshower detector to be used in compact muon solenoid (CMS)experiment at the large hadron collider (LHC), CERN, has been studied through simulations. Detailed calculations using Hamburg model have allowed the parameterization of these effects and helped to simulate the operation scenario of MO equipped sensors over ten years of LHC operation. The utility of overhanging metal extension as junction termination technique after space charge sign inversion (SCSI) has been explored in detail for the first time in this work. Several interesting results like a shift in the optimal oxide thickness in MO equipped structures after irradiation have been reported. The comparison of dielectric and semi-insulator passivated MO equipped structures after irradiation has been studied. Also, the impact of various crucial geometrical parameters like device depth (W/sub N/), width of back N/sup +/ layer used for ohmic contact (W/sub N//sup +/), strip width (W), strip pitch (P) and width of overhang extension (W/sub MO/) on the MO equipped structure after SCSI has been presented in detail.

[1]  R. K. Shivpuri,et al.  Analysis of interstrip capacitance of Si microstrip detector using simulation approach , 2003 .

[2]  R. K. Shivpuri,et al.  Analysis and comparison of the breakdown performance of semi-insulator and dielectric passivated Si strip detectors , 2002 .

[3]  R. K. Shivpuri,et al.  A CAD investigation of metal-overhang on multiple guard ring design for high voltage operation of Si sensors , 2002 .

[4]  R. K. Shivpuri,et al.  A new approach to the optimal design of multiple field-limiting ring structures , 2001 .

[5]  Analysis and optimal design of Si microstrip detector with overhanging metal electrode , 2001 .

[6]  I. Golutvin,et al.  Investigation of silicon sensors quality as a function of the ohmic side processing technology , 2000, 2000 IEEE Nuclear Science Symposium. Conference Record (Cat. No.00CH37149).

[7]  P. Ciampolini,et al.  Physical modeling of silicon microstrip detectors: influence of the electrode geometry on critical electric fields , 2000 .

[8]  M. Moll,et al.  Investigation on the improved radiation hardness of silicon detectors with high oxygen concentration CERN Project RD48 (The ROSE Collaboration) , 2000 .

[9]  D. Bisello,et al.  High-voltage breakdown studies on Si microstrip detectors , 1999, Il Nuovo Cimento A.

[10]  Does radiation improve silicon detectors? , 1999, 1999 IEEE Nuclear Science Symposium. Conference Record. 1999 Nuclear Science Symposium and Medical Imaging Conference (Cat. No.99CH37019).

[11]  Alessandro Paccagnella,et al.  Study of Breakdown Effects in , 1999 .

[12]  C. J. Li,et al.  Improved neutron radiation hardness for Si detectors: application of low resistivity starting material and/or manipulation of N/sub eff/ by selective filling of radiation-induced traps at low temperatures , 1998 .

[13]  Min-Koo Han,et al.  Optimum design of the field plate in the cylindrical p+n junction: analytical approach , 1998 .

[14]  K. Wyllie.  Floating guard rings as high-voltage termination structures for radiation-tolerant silicon detectors , 1998 .

[15]  S. U. Pandey,et al.  Simulation and design of various configurations of silicon detectors for high irradiation tolerance up to 6×1014n/cm2 in LHC application , 1998 .

[16]  P. Elmer,et al.  The new ALEPH Silicon Vertex Detector , 1998 .

[17]  A. Carter,et al.  Radiation-tolerant breakdown protection of silicon detectors using multiple floating guard rings , 1997 .

[18]  R. Wunstorf.  Radiation hardness of silicon detectors: current status , 1997 .

[19]  K. Fujita,et al.  Micro-discharge at strip edge of silicon microstrip sensors , 1996 .

[20]  D. Bisello,et al.  Bulk radiation damage in silicon detectors and implications for LHC experiments , 1996 .

[21]  D. Hauff,et al.  Strip detector design for ATLAS and HERA-B using two-dimensional device simulation , 1996 .

[22]  G. Hall.  Detector radiation damage studies for a silicon microstrip tracker at LHC , 1994 .

[23]  M. Nese,et al.  Guard ring design for high voltage operation of silicon detectors , 1993 .

[24]  D. Pitzl,et al.  Type inversion in silicon detectors , 1992 .

[25]  M. Glaser,et al.  Neutron-induced radiation damage in silicon detectors , 1991, Conference Record of the 1991 IEEE Nuclear Science Symposium and Medical Imaging Conference.

[26]  K. Bhat,et al.  Effect of lateral curvature on the breakdown voltage of planar diodes , 1985, IEEE Electron Device Letters.

[27]  H. Kraner.  Radiation damage in silicon detectors , 1983 .

[28]  K. N. Bhat,et al.  Analytical solutions for the breakdown voltages of punched-through diodes having curved junction boundaries at the edges , 1980, IEEE Transactions on Electron Devices.

[29]  M.S. Adler,et al.  Theory and breakdown voltage for planar devices with a single field limiting ring , 1977, IEEE Transactions on Electron Devices.

[30]  E. D. Wolley,et al.  High-voltage planar p-n junctions , 1967 .

[31]  G. Gibbons,et al.  Effect of junction curvature on breakdown voltage in semiconductors , 1966 .