论文信息 - Gas development at the interface of directly bonded silicon wafers: investigation on silicon-based pressure sensors - 字舞流文

Gas development at the interface of directly bonded silicon wafers: investigation on silicon-based pressure sensors

U. Gösele | S. Mack | H. Baumann

[1] R. Schlögl,et al. Analysis of Bonding‐Related Gas Enclosure in Micromachined Cavities Sealed by Silicon Wafer Bonding , 1997 .

[2] U. Gösele,et al. Semiconductor wafer bonding: recent developments , 1994 .

[3] Manfred Reiche,et al. Hydrophobic silicon wafer bonding , 1994 .

[4] U. Gösele,et al. Formation of interface bubbles in bonded silicon wafers: A thermodynamic model , 1992 .

[5] Y. Chabal. Etching of Silicon (111) and (100) Surfaces in HF Solutions: H-Termination, Atomic Structure and Overall Morphology , 1992 .

[6] M. K. Andrews,et al. Silicon Micromachined Sensors , 1989 .