Charge balancing in GaN-based 2-D electron gas devices employing an additional 2-D hole gas and its influence on dynamic behaviour of GaN-based heterostructure field effect transistors
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O. Ambacher | A. Vescan | H. Hahn | H. Kalisch | F. Benkhelifa | B. Reuters | S. Geipel | Meike Schauerte | Benjamin Reuters