Evaluation of SiC based inverter drives

In this paper, design considerations for transitioning from a Si-IGBT based inverter to a SiC-MOSFET based inverter are discussed. An existing Si-IGBT power structure is modified using a footprint compatible SiC-MOSFET module, with changes made to the power structure and gate drive for the high PWM switching frequency required for SiC devices. Design issues such as inductance minimization, EMC mitigation and short-circuit protection are discussed.

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