In situ substrate surface cleaning by low‐energy ion bombardment for high quality thin film formation

The in situ cleaning of a substrate surface by low‐energy ion bombardment is discussed concentrating on the effect on the quality of sputter‐deposited metal thin films. The removal of carbon from the wafer surface with the addition of H2 to Ar plasma atmosphere during the in situ cleaning was confirmed by secondary ion mass spectrometry evaluation. High crystallinity Ti films were obtained by deposition using Ar/H2 in situ cleaning by low‐energy ion bombardment. By the introduction of the Ar/H2 plasma in situ substrate surface cleaning, Ti film growth by sputtering was confirmed to improve its crystallinity and its surface smoothness.