High Brightness GaN-Based Light-Emitting Diodes

This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces

[1]  W. Wang,et al.  Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates , 2005, IEEE Photonics Technology Letters.

[2]  H. Kuo,et al.  GaN-based LEDs with Al-deposited V-shaped sapphire facet mirror , 2006, IEEE Photonics Technology Letters.

[3]  Eric A. Armour,et al.  Investigation of V-Defects and embedded inclusions in InGaN/GaN multiple quantum wells grown by metalorganic chemical vapor deposition on (0001) sapphire , 2003 .

[4]  M. Shur,et al.  Introduction to Solid-State Lighting , 2002 .

[5]  Misha Boroditsky,et al.  Light-emitting diode extraction efficiency , 1997, Photonics West.

[6]  Light Extraction in GaInN Light-Emitting Diodes using Diffuse Omnidirectional Reflectors , 2006 .

[7]  E. F. Schubert,et al.  GaInN light-emitting diodes with omnidirectional reflectors , 2003, SPIE OPTO.

[8]  S. Ting,et al.  Morphological evolution of InGaN/GaN quantum-well heterostructures grown by metalorganic chemical vapor deposition , 2003 .

[9]  K. Lau,et al.  Enhanced luminescence from GaN-based blue LEDs grown on grooved sapphire substrates , 2005, IEEE Photonics Technology Letters.

[10]  S. Denbaars,et al.  Increase in the extraction efficiency of GaN-based light-emitting diodes via surface roughening , 2004 .

[11]  D. H. Mash,et al.  Light-emitting diodes , 1977, Nature.

[12]  Tsunemasa Taguchi,et al.  High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy , 2001 .

[13]  P. Hinze,et al.  Suppression of nonradiative recombination by V-shaped pits in GaInN/GaN quantum wells produces a large increase in the light emission efficiency. , 2005, Physical review letters.

[14]  Takashi Mukai,et al.  Surface plasmon enhanced spontaneous emission rate of InGaN∕GaN quantum wells probed by time-resolved photoluminescence spectroscopy , 2005 .

[15]  Seong-Jin Kim.  Improvement of GaN-based light-emitting diode by indium-tin-oxide transparent electrode and vertical electrode , 2005 .

[16]  Seong-Jin Kim,et al.  Vertical Electrode GaN-Based Light-Emitting Diode Fabricated by Selective Wet Etching Technique , 2005 .

[17]  Takashi Mukai,et al.  InGaN-Based Near-Ultraviolet and Blue-Light-Emitting Diodes with High External Quantum Efficiency Using a Patterned Sapphire Substrate and a Mesh Electrode , 2002 .

[18]  H. Kuo,et al.  Enhancing the output power of GaN-based LEDs grown on wet-etched patterned sapphire substrates , 2006, IEEE Photonics Technology Letters.

[19]  M. Koike,et al.  Development of high efficiency GaN-based multiquantum-well light-emitting diodes and their applications , 2002 .

[20]  Fernando Ponce,et al.  High dislocation densities in high efficiency GaN‐based light‐emitting diodes , 1995 .

[21]  Y. J. Leea,et al.  Improvement in light-output efficiency of near-ultraviolet InGaN – GaN LEDs fabricated on stripe patterned sapphire substrates , 2005 .