Accurate analysis of temperature effects in I/SUB c/V/SUB BE/ characteristics with application to bandgap reference sources

The inaccuracy of the analyses commonly used for predicting the temperature behavior of the I/SUB C/-V/SUB BE/ characteristics of transistors and the output of bandgap reference sources is pointed out. The problem is traced to a basic assumption implicit in such analyses, namely that the variation of the bandgap voltage of silicon with temperature is linear; this assumption is shown to be of poor accuracy. By taking into account the nonlinearity in this variation, new accurate formulas are derived. Both the previous analyses and the proposed analysis are compared to experiment; a valuable improvement is demonstrated. Equations which should prove to value in the design of bandgap reference sources and bipolar transistor temperatures transducers are given. Higher order effects are discussed.

[1]  G. Macfarlane,et al.  FINE STRUCTURE IN THE ABSORPTION-EDGE SPECTRUM OF SI , 1957 .

[2]  D. Hilbiber.  A new semiconductor voltage standard , 1964 .

[3]  Y. P. Varshni.  Temperature dependence of the energy gap in semiconductors , 1967 .

[4]  J. S. Brugler.  Silicon Transistor Biasing for Linear Collector Current Temperature Dependence , 1967 .

[5]  J. R. Haynes,et al.  New Radiative Recombination Processes Involving Neutral Donors and Acceptors in Silicon and Germanium , 1967 .

[6]  R. J. Widlar,et al.  New developments in IC voltage regulators , 1970 .

[7]  R. Nahory,et al.  Valley-Orbit Splitting of Free Excitons? The Absorption Edge of Si , 1970 .

[8]  K. E. Kuijk,et al.  A precision reference voltage source , 1973 .

[9]  A. Brokaw,et al.  A simple three-terminal IC bandgap reference , 1974 .

[10]  A. Onton,et al.  Temperature dependence of the band gap of silicon , 1974 .

[11]  R. Dobkin,et al.  Monolithic temperature transducer , 1974 .

[12]  G.C.M. Meijer,et al.  An Integrated Bandgap-Reference , 1975, 1975 First European Solid State Circuits Conference (ESSCIRC).

[13]  C. D. Thurmond.  THE STANDARD THERMODYNAMIC FUNCTIONS FOR THE FORMATION OF ELECTRONS AND HOLES IN GE, SI, GAAS, AND GAP , 1975 .

[14]  H. C. de Graaff,et al.  Measurements of bandgap narrowing in Si bipolar transistors , 1976 .

[15]  Akira Ohte,et al.  A Precision Silicon Transistor Thermometer , 1977, IEEE Transactions on Instrumentation and Measurement.

[16]  Gerard C. M. Meijer.  A New Configuration for Temperature Transducers and Bandgap References , 1978, ESSCIRC 78: 4th European Solid State Circuits Conference - Digest of Technical Papers.

[17]  Nuggehalli M. Ravindra,et al.  Temperature dependence of the energy gap in semiconductors , 1979 .

[18]  G.C.M. Meijer,et al.  Measurement of the temperature dependence of the I/SUB C/(V/SUB be/) characteristics of integrated bipolar transistors , 1980 .