Silicon plasmonics at midinfrared using silicon-insulator-silicon platform

Abstract. We propose devices based on doped silicon. Doped silicon is designed to act as a plasmonic medium in the midinfrared (MIR) range. The surface plasmon frequency of the doped silicon can be tuned within the MIR range, which gives rise to useful properties in the material’s dispersion. We propose various plasmonic configurations that can be utilized for silicon on-chip applications in MIR. These devices have superior performance over conventional silicon devices and provide unique functionalities such as 90-sharp degree bends, T- and X-junction splitters, and stubs. These devices are CMOS-compatible and can be easily integrated with other electronic devices. In addition, the potential for biological and environmental sensing using doped silicon nanowires is demonstrated.

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