Compact modeling of FinFETs featuring independent-gate operation mode
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M.B. Ketchen | A.M. Niknejad | C. Hu | S. Balasubramanian | C.-H. Lin | M. Chan | L. Chang | M. Dunga | X. Xi | J. He | R.Q. Williams | W.E. Haensch
[1] Yuan Taur,et al. Analytic solutions of charge and capacitance in symmetric and asymmetric double-gate MOSFETs , 2001 .
[2] H. Yamauchi,et al. A highly threshold Voltage-controllable 4T FinFET with an 8.5-nm-thick Si-fin channel , 2004, IEEE Electron Device Letters.
[3] Mansun Chan,et al. Threshold voltage model for deep-submicrometer fully depleted SOI MOSFET's , 1995 .
[4] Dimitri A. Antoniadis,et al. Back-gated CMOS on SOIAS for dynamic threshold voltage control , 1997 .