1/f noise sources

This survey deals with l/f noise in homogeneous semiconductor samples. A distinction is made between mobility noise and number noise. It is shown that there always is mobility noise with an (Y value with a magnitude in the order of Damaging the crystal has a strong influence on cy, cy may increase by orders of magnitude. Some theoretical models are briefly discussed; none of them can explain all experimental results. The cy values of several semiconductors are given. These values can be used in calculations of l/f noise in devices. inhomogeneous and often nonlinear devices. For the same reason, values obtained from devices are excluded from Fig. 5 at the end of this paper. nere we present reliable data, Obtained from homogenous Four types of noise are of importance in semiconductors. 1) Thermal noise. Any resistance R shows spontaneous current fluctuations or voltage fluctuations according to:

[1]  A. L. McWhorter,et al.  1/f noise and related surface effects in germanium , 1955 .

[2]  R. Müller,et al.  Generation-Recombination Noise , 1978 .

[3]  Pulak Dutta,et al.  Energy Scales for Noise Processes in Metals , 1979 .

[4]  L.K.J. Vandamme,et al.  Experimental studies on 1/f noise , 1981 .

[5]  P. M. Horn,et al.  Low-frequency fluctuations in solids: 1/f noise , 1981 .

[6]  On the low-frequency current 1/f noise in metals , 1984 .

[7]  Peter Händel,et al.  Quantum 1/f noise associated with ionized impurity scattering and electron-phonon scattering in condensed matter , 1985 .

[8]  Decomposition of generation-recombination noise spectra in separate Lorentzians , 1985 .

[9]  Quantitative "local-interference" model for 1/f noise in metal films. , 1987, Physical review. B, Condensed matter.

[10]  T. Kleinpenning,et al.  Relation between variance and sample duration of 1/f noise signals , 1988 .

[11]  M. Weissman.  1/f noise and other slow, nonexponential kinetics in condensed matter. , 1988 .

[12]  LOW FREQUENCY NOISE OF HgCdTe PHOTOCONDUCTORS , 1989 .

[13]  L.K.J. Vandamme,et al.  Bulk and surface 1/f noise , 1989 .

[14]  F. Hofman,et al.  The validity of Hooge's law for 1/f noise , 1989 .

[15]  Toshimitsu,et al.  1/f phonon-number fluctuations in quartz observed by laser light scattering. , 1990, Physical review letters.

[16]  F. N. Hooge,et al.  The relation between 1/ƒ noise and number of electrons , 1990 .

[17]  Temperature dependence of the low-frequency noise in structurally perfect GaAs and after destructive compression , 1991 .

[18]  Nature of the bulk 1/f noise in GaAs and Si (review) , 2008 .

[19]  C. V. Vliet,et al.  A survey of results and future prospects on quantum 1ƒf noise and 1ƒf noise in general , 1991 .

[20]  M. Leys,et al.  1/f noise at room temperature in n-type GaAs grown by molecular beam epitaxy , 1991 .

[21]  Relaxation of the photoconductivity and 1/f noise in GaAs subjected to damaging compression , 1991 .

[22]  1/ f Fluctuations of Phonon Energy in Water , 1992 .

[23]  Influence of compensating annealing on the 1/f noise in CdxHg1-xTe , 1992 .

[24]  武者 利光,et al.  Noise in physical systems and 1/f fluctuations , 1992 .

[25]  Noise of the 1/f type and electrical and photoelectric properties of GaAs bombarded with high-energy ions , 1992 .

[26]  F. Hooge,et al.  Experimental studies of 1/f noise in n-GaAs , 1993 .

[27]  L. Ren,et al.  1⧸f-noise in the hall voltage of epitaxial n-GaAs , 1993 .

[28]  L. Ren.  Intrinsic and extrinsic 1/f noise sources in proton‐irradiated n‐GaAs epitaxial layers , 1993 .

[29]  On the variances of generation-recombination noise in a three-level system , 1994 .