1 V, 0.18 μm-area and power efficient UWB LNA utilising active inductors

A low-noise amplifier (LNA) for the lower ultra wideband (UWB) communication bandwidth (3.1-4.8 GHz) utilising area and power efficient active inductor implementation is presented. A loss regulated active inductor structure is used to realise shunt peaking inductances, which enable the design to attain a tunable peak S 21 of 14.85 dB with a -3dB bandwidth of 2.75-4.9 GHz. Implemented in 0.18 μm CMOS technology with a 1 V supply voltage, the LNA core consumes 7.1 mA while occupying an area of only 0.05 mm 2 .