论文信息 - Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical‐cavity, single pass configuration

Observation of stimulated emission in the near ultraviolet from a molecular beam epitaxy grown GaN film on sapphire in a vertical‐cavity, single pass configuration

We report the first observation of stimulated emission from a GaN film grown by ion‐assisted molecular beam epitaxy. The observed near‐UV optical emission power was a nonlinear function of the pump power density. The characteristics of the observed stimulated emission are similar to those observed recently from films grown with low‐pressure metalorganic chemical vapor deposition techniques.

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