Bipolar transistor equivalents in CMOS technology

A CMOS circuit element equivalent to a bipolar junction transistor (BJT) which provides symmetrical performances of npn/pnp and ideality factor programming is proposed. Simulation showed that the /spl beta/, and Early voltage are superior to those of a typical BJT below about 1.65 GHz in a 0.8 /spl mu/m CMOS technology and the fabricated prototype has 2.3/spl times/10/sup -16/ A of I/sub S/, 2.4 mA of I/sub KF/ and 390 V of Early voltage.