Ultra low thermal budget anneals for 3D memories: Access device formation

Annealing of 3D architectures is one of the major challenges for current and next generation devices. Recent development in vertically stacking functional layers of devices to increase the density per unit area of memories is bringing to the front very low thermal budget annealing technologies. In this work, we demonstrate that Laser Thermal Annealing is an adapted process for Si-based access device formation of 3D crossbar compatible memory cell architectures such as PCRAM and ReRAM, which require ultra low thermal budget, good crystalline quality and diffusion control.